公开(公告)号：US20200013853A1

公开(公告)日：2020-01-09

申请号：US16573156

申请日：2019-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Kyuho CHO ,  Sangyeol KANG ,  Suhwan KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC分类号： H01L49/02 ,  H01L21/02

摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20220336578A1

公开(公告)日：2022-10-20

申请号：US17857383

申请日：2022-07-05

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gihee CHO ,  Sangyeol KANG ,  Jungoo KANG ,  Taekyun KIM ,  Jiwoon PARK ,  Sanghyuck AHN ,  Jin-Su LEE ,  Hyun-Suk LEE ,  Hongsik CHAE

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

公开(公告)号：US20200091278A1

公开(公告)日：2020-03-19

申请号：US16392097

申请日：2019-04-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Kyooho JUNG ,  Sangyeol KANG ,  Kyuho CHO ,  Eunsun KIM ,  Hyosik MUN

IPC分类号： H01L49/02

摘要： A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

公开(公告)号：US20220037461A1

公开(公告)日：2022-02-03

申请号：US17189700

申请日：2021-03-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Gihee CHO ,  Sangyeol KANG ,  Jungoo KANG ,  Taekyun KIM ,  Jiwoon PARK ,  Sanghyuck AHN ,  Jin-Su LEE ,  Hyun-Suk LEE ,  Hongsik CHAE

IPC分类号： H01L49/02 ,  H01L27/108

摘要： A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.