公开(公告)号：US20170018604A1

公开(公告)日：2017-01-19

申请号：US15083688

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Hyoung AHN ,  Young-Geun PARK ,  Jong-Bom SEO ,  Jae-Hyoung CHOI

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/40 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/0228 ,  H01L27/10852

Abstract: A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a metal precursor on the interfacial oxide film at a first pressure to adsorb the metal precursor into the interfacial oxide film, performing a first purge process at a second pressure to remove the unadsorbed metal precursor, the second pressure lower than the first pressure, providing an oxidizing gas at the first pressure to react with the adsorbed metal precursor, performing a second purge process at the second pressure to remove the unreacted oxidizing gas and form a dielectric film, and forming an upper metal layer on the dielectric film.

Abstract translation: 制造半导体器件的方法包括形成下金属层，在下金属层上形成界面氧化膜，在第一压力下在界面氧化膜上提供金属前体，以将金属前体吸附到界面氧化膜中，执行 在第二压力下的第一吹扫过程以除去未吸附的金属前体，第二压力低于第一压力，在第一压力下提供氧化气体以与吸附的金属前体反应，在第二压力下进行第二吹扫过程 去除未反应的氧化气体并形成电介质膜，并在电介质膜上形成上层金属层。

公开(公告)号：US20200013853A1

公开(公告)日：2020-01-09

申请号：US16573156

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  Sangyeol KANG ,  Suhwan KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20180315811A1

公开(公告)日：2018-11-01

申请号：US15938234

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  SANGYEOL KANG ,  SUHWAN KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02244 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L28/91

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.