公开(公告)号：US20210359102A1

公开(公告)日：2021-11-18

申请号：US17390864

申请日：2021-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20190013391A1

公开(公告)日：2019-01-10

申请号：US15995049

申请日：2018-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L29/06 ,  H01L29/15 ,  H01L21/762

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20140297672A1

公开(公告)日：2014-10-02

申请号：US14225901

申请日：2014-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoon SONG ,  Seungtaek PARK ,  Kyuho CHO ,  Sungyeol JIN

IPC: G06F17/30

CPC classification number: G06F16/9535

Abstract: A method and a system for registering content by a third party and recommending the registered content to a user of a user terminal are provided. The content service method includes receiving usage data from a user terminal, analyzing user's propensity according to the usage data, searching a trigger condition, corresponding to a result of the analysis, from a database module, and transmitting identification information of content, mapped to the searched trigger condition among the content stored in the database module, to the user terminal

Abstract translation: 提供了一种用于由第三方注册内容并向用户终端的用户推荐注册内容的方法和系统。 内容服务方法包括从用户终端接收使用数据，根据使用数据分析用户的倾向，从数据库模块搜索对应于分析结果的触发条件，并发送映射到内容的标识信息 在存储在数据库模块中的内容之间搜索触发条件到用户终端

公开(公告)号：US20220238691A1

公开(公告)日：2022-07-28

申请号：US17720198

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20210159072A1

公开(公告)日：2021-05-27

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Woojin LEE ,  Myoungho JEONG ,  Yongsung KIM ,  Eunsun KIM ,  Hyosik MUN ,  Jooho LEE ,  Changseung LEE ,  Kyuho CHO ,  Darrell G. SCHLOM ,  Craig J. FENNIE ,  Natalie M. DAWLEY ,  Gerhard H. OLSEN ,  Zhe WANG

IPC: H01L21/02 ,  H01L49/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20200091278A1

公开(公告)日：2020-03-19

申请号：US16392097

申请日：2019-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho JUNG ,  Sangyeol KANG ,  Kyuho CHO ,  Eunsun KIM ,  Hyosik MUN

IPC: H01L49/02

Abstract: A method of manufacturing a semiconductor device includes forming a first electrode, forming a preliminary dielectric layer on the first electrode, forming a second electrode on the preliminary dielectric layer, and at least partially phase-changing the preliminary dielectric layer to form a dielectric layer. An interfacial energy between the first electrode and the dielectric layer may be less than an interfacial energy between the first electrode and the preliminary dielectric layer.

公开(公告)号：US20210013319A1

公开(公告)日：2021-01-14

申请号：US17035675

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunmin MOON ,  Young-Lim PARK ,  Kyuho CHO ,  HANJIN LIM

IPC: H01L29/51 ,  H01L21/762 ,  H01L29/15 ,  H01L29/06 ,  H01L27/108 ,  H01L49/02

Abstract: Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.

公开(公告)号：US20200013853A1

公开(公告)日：2020-01-09

申请号：US16573156

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  Sangyeol KANG ,  Suhwan KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02 ,  H01L21/02

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

公开(公告)号：US20180315811A1

公开(公告)日：2018-11-01

申请号：US15938234

申请日：2018-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho CHO ,  SANGYEOL KANG ,  SUHWAN KIM ,  Sunmin MOON ,  Young-Lim PARK ,  Jong-Bom SEO ,  Joohyun JEON

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02244 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02356 ,  H01L21/02362 ,  H01L28/91

Abstract: A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.