公开(公告)号：US20170085224A1

公开(公告)日：2017-03-23

申请号：US14954561

申请日：2015-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Sik YOUN ,  Seung Chul LEE ,  Ji Seon PAEK ,  Thomas Byunghak CHO

IPC: H03F1/02 ,  H03F3/21 ,  H03F3/193

CPC classification number: H03F1/0227 ,  H03F1/0211 ,  H03F3/19 ,  H03F3/193 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F2200/102 ,  H03F2200/105 ,  H03F2200/421 ,  H03F2200/432 ,  H03F2200/451

Abstract: An apparatus for and method of a supply modulator (SM) for a power amplifier (PA) is provided. The apparatus includes a buck-boost converter, including a supply input connected to a battery voltage (Vbat), and an output; a switch and capacitors module, including a first input connected to the output of the buck-boost converter, and a second input; a buck (dual) converter, including a supply input connected to Vbat, an input connected to the output of the buck-boost converter, and an output connected to the second input of the switch and capacitors module; a linear amplifier (LA), including a supply input connected to the output of the buck-boost converter, an input, and an output connected to the second input of the switch and capacitors module; and the PA, including a supply input connected to the output of the buck (dual converter, an input for receiving a radio frequency (RF) signal, and an output for outputting an RF signal.

公开(公告)号：US20150041916A1

公开(公告)日：2015-02-12

申请号：US13962285

申请日：2013-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheong Sik YU ,  Cheolhwyi BAE ,  JeeHoo PARK ,  Seung Chul LEE

IPC: H01L27/11 ,  H01L29/78

CPC classification number: H01L27/1104 ,  H01L21/823412 ,  H01L21/823807 ,  H01L27/0207 ,  H01L29/78

Abstract: A co-implant concentration of a source region of a pull-down transistor is higher than those of other co-implant concentrations. Thus, dopants in a halo region of the source region may be prevented from excessively being diffused into a channel region during a post annealing process. As a result, dispersion of saturation threshold voltages of unit memory cells may be reduced.

Abstract translation: 下拉晶体管的源极区域的共注入浓度高于其他共注入浓度。 因此，可以防止源区域的晕圈区域中的掺杂剂在后退火处理过程中过度扩散到沟道区域。 结果，可以减小单位存储单元的饱和​​阈值电压的偏差。