公开(公告)号：US11984448B2

公开(公告)日：2024-05-14

申请号：US17509265

申请日：2021-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok Young Lee ,  Young Mook Oh ,  Hyung Goo Lee ,  Hae Geon Jung ,  Seung Mo Ha

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/0886 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0924

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. The first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.

公开(公告)号：US11830911B2

公开(公告)日：2023-11-28

申请号：US18162892

申请日：2023-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/417 ,  H10B10/00

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/41791 ,  H10B10/12 ,  H10B10/18

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US10529801B2

公开(公告)日：2020-01-07

申请号：US15933827

申请日：2018-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L27/11

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US12261200B2

公开(公告)日：2025-03-25

申请号：US18488381

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/417 ,  H10B10/00

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US11575002B2

公开(公告)日：2023-02-07

申请号：US17212847

申请日：2021-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L27/11 ,  H01L29/417

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20230178595A1

公开(公告)日：2023-06-08

申请号：US18162892

申请日：2023-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L27/0886 ,  H01L21/823431 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/41791

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US10964782B2

公开(公告)日：2021-03-30

申请号：US16715075

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L27/11 ,  H01L29/417

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

公开(公告)号：US20190096993A1

公开(公告)日：2019-03-28

申请号：US15933827

申请日：2018-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Chul Sun ,  Dae Won Ha ,  Dong Hoon Hwang ,  Jong Hwa Baek ,  Jong Min Jeon ,  Seung Mo Ha ,  Kwang Yong Yang ,  Jae Young Park ,  Young Su Chung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/762

Abstract: A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.