公开(公告)号：US20160141015A1

公开(公告)日：2016-05-19

申请号：US14837294

申请日：2015-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Hun LEE ,  Hyung-Chan CHOI ,  Won-Jae SHIN

IPC: G11C11/4074 ,  G11C11/408

CPC classification number: G11C11/4074 ,  G11C5/145 ,  G11C5/148 ,  G11C7/20 ,  G11C8/12 ,  G11C11/4072 ,  G11C11/4087

Abstract: A memory device may include a power-up control circuit and a first set of boost voltage generators. The power-up control circuit may be configured to consecutively activate a first set of power-up signals with a first delay time between each power-up signal of the first set of power-up signals in response to a rise of a power supply voltage and a reset signal having a first logic level at an initial stage of power-up. The first set of boost voltage generators may be configured to generate an internal boost voltage based on an external boost voltage and the first set of power-up signals. The first set of boost voltage generators may be configured to activate before the reset signal transitions from the first logic level to a second logic level opposite to the first logic level.

Abstract translation: 存储器件可以包括上电控制电路和第一组升压电压发生器。 上电控制电路可以被配置为响应于电源电压的上升，以第一组加电信号的每个上电信号之间的第一延迟时间连续激活第一组上电信号 以及在上电初始阶段具有第一逻辑电平的复位信号。 第一组升压电压发生器可以被配置为基于外部升压电压和第一组上电信号产生内部升压电压。 第一组升压电压发生器可以被配置为在复位信号从第一逻辑电平转变到与第一逻辑电平相反的第二逻辑电平之前激活。

公开(公告)号：US20210119036A1

公开(公告)日：2021-04-22

申请号：US17119507

申请日：2020-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Sung-Min KIM ,  Dong-Suk SHIN ,  Seung-Hun LEE ,  Dong-Won KIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/11 ,  H01L29/06 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

公开(公告)号：US20200332456A1

公开(公告)日：2020-10-22

申请号：US16852909

申请日：2020-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongwoo YI ,  Jun-Young CHOI ,  Minhyung KIM ,  Joonho KIM ,  Dong-Il BACK ,  Byoungwoong AN ,  Seung-Hun LEE

IPC: D06F39/14 ,  D06F33/30

Abstract: Provided is a washing machine including a main body having a first inlet, a drum arranged inside the main body to accommodate laundry, and a door configured to open and close the first inlet, wherein the door includes a second inlet to allow laundry to be introduced into the drum while the first inlet closed, an auxiliary door configured to open and close the second inlet, and a restraining device configured to restrain the auxiliary door such that the auxiliary door remains locked onto the door, and the main body includes a pressing device arranged inside the main body and configured to press the restraining device such that the restraining device locks the auxiliary door and to release from the retraining device such that the restraining device unlocks the auxiliary door.

公开(公告)号：US20190081168A1

公开(公告)日：2019-03-14

申请号：US16045305

申请日：2018-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan YU ,  Sung-Min KIM ,  Dong-Suk SHIN ,  Seung-Hun LEE ,  Dong-Won KIM

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L27/11

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.