公开(公告)号：US20210357319A1

公开(公告)日：2021-11-18

申请号：US17386782

申请日：2021-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon MOON ,  Kyung Ho KIM ,  Seunguk SHIN ,  Sung WON JUNG

IPC: G06F12/02

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

公开(公告)号：US20210255780A1

公开(公告)日：2021-08-19

申请号：US17307098

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-San KIM ,  Kyung Ho KIM ,  Seokhwan KIM ,  Seunguk SHIN ,  Jihyun LIM

IPC: G06F3/06 ,  G06F13/24

Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.

公开(公告)号：US20200278926A1

公开(公告)日：2020-09-03

申请号：US16877802

申请日：2020-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkwon MOON ,  Kyung Ho KIM ,  Seunguk SHIN ,  Sung WON JUNG

IPC: G06F12/02

Abstract: An access method of a nonvolatile memory device included in a user device includes receiving a write request to write data into the nonvolatile memory device; detecting an application issuing the write request, a user context, a queue size of a write buffer, an attribute of the write-requested data, or an operation mode of the user device; and deciding one of a plurality of write modes to use for writing the write-requested data into the nonvolatile memory device according to the detected information. The write modes have different program voltages and verify voltage sets.

公开(公告)号：US20170336988A1

公开(公告)日：2017-11-23

申请号：US15598850

申请日：2017-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-San KIM ,  Kyung Ho KIM ,  Seokhwan KIM ,  Seunguk SHIN ,  Jihyun LIM

IPC: G06F3/06 ,  G06F13/24

CPC classification number: G06F3/0611 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/24

Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.