公开(公告)号：US20240413068A1

公开(公告)日：2024-12-12

申请号：US18639081

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun LIM

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L25/18 ,  H10B80/00

Abstract: A semiconductor substrate includes: a plurality of first pad patterns; a first insulating layer covering side surfaces of the plurality of first pad patterns, and having first openings that expose at least portions of the plurality of first pad patterns; a plurality of redistribution wirings provided on the first insulating layer, and electrically connected to the plurality of first pad patterns through the first openings of the first insulating layer; a second insulating layer covering the plurality of redistribution wirings, and having second openings that expose at least portions of the plurality of redistribution wirings; a plurality of second pad patterns provided on the second insulating layer, and electrically connected to the plurality of redistribution wirings through the second openings of the second insulating layer; and a plurality of heat transfer patterns provided on the plurality of first pad patterns and not covered by the first insulating layer.

公开(公告)号：US20170336988A1

公开(公告)日：2017-11-23

申请号：US15598850

申请日：2017-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-San KIM ,  Kyung Ho KIM ,  Seokhwan KIM ,  Seunguk SHIN ,  Jihyun LIM

IPC: G06F3/06 ,  G06F13/24

CPC classification number: G06F3/0611 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/24

Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.

公开(公告)号：US20210255780A1

公开(公告)日：2021-08-19

申请号：US17307098

申请日：2021-05-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-San KIM ,  Kyung Ho KIM ,  Seokhwan KIM ,  Seunguk SHIN ,  Jihyun LIM

IPC: G06F3/06 ,  G06F13/24

Abstract: A computer system includes a host and a storage device. The host provides an input/output request (IO request). The storage device receives the IO request from the host and sends an interrupt informing input/output completion (IO completion) to the host after completing the IO request. The host adjusts the number of generated interrupts of the storage device using the number of delayed IOs. The computer system may adaptively control interrupt generation of the storage device based on a load status of a CPU or the number of delayed IOs. The interrupt generation of the storage device may be adjusted to obtain a CPU gain without loss of performance or processing time of the computer system.

公开(公告)号：US20210305021A1

公开(公告)日：2021-09-30

申请号：US17108037

申请日：2020-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Incheol SONG ,  Masayuki TOMOYASU ,  Hongmin YOON ,  Jihyun LIM

IPC: H01J37/32

Abstract: A focus ring includes a first conductive layer having a first thickness and a first specific resistance, a second conductive layer stacked on the first conductive layer, the second conductive layer having a second thickness greater than the first thickness and a second specific resistance greater than the first specific resistance, and a dielectric layer on one of a lower surface of the first conductive layer and an upper surface of the second conductive layer.

公开(公告)号：US20200335376A1

公开(公告)日：2020-10-22

申请号：US16683707

申请日：2019-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo SUN ,  Incheol SONG ,  Hongmin YOON ,  Jihyun LIM ,  Masayuki TOMOYASU ,  Jewoo HAN

IPC: H01L21/683 ,  H01J37/32

Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground. The focus ring has an inner side surface, and an opposite outer side surface that contacts the cover ring, and a width between the inner side surface and the outer side surface of the focus ring is a first width. The cover ring has an inner side surface that contacts the outer side surface of the focus ring, and an outer side surface, and a width between the inner side surface and the outer side surface of the cover ring is a second width. The first width is between 2 and 10 time the second width.