公开(公告)号：US10050038B2

公开(公告)日：2018-08-14

申请号：US15331069

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L21/28 ,  H01L23/528 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US20170365608A1

公开(公告)日：2017-12-21

申请号：US15331069

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L29/49 ,  H01L29/08 ,  H01L21/28 ,  H01L23/528 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L27/10823 ,  H01L21/28088 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US20180331111A1

公开(公告)日：2018-11-15

申请号：US16033302

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/08 ,  H01L21/28 ,  H01L23/528

CPC classification number: H01L27/10823 ,  H01L21/28088 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US10748905B2

公开(公告)日：2020-08-18

申请号：US16033302

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L21/28 ,  H01L23/528 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.