公开(公告)号：US20180331111A1

公开(公告)日：2018-11-15

申请号：US16033302

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L29/51 ,  H01L29/49 ,  H01L29/423 ,  H01L29/08 ,  H01L21/28 ,  H01L23/528

CPC classification number: H01L27/10823 ,  H01L21/28088 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US11336931B2

公开(公告)日：2022-05-17

申请号：US16780356

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-jin Park ,  Su-min Kim ,  Seock-young Shim ,  Ji-eun Lee ,  Sung-min Lim

IPC: H04N21/41 ,  H04N21/2343 ,  H04N21/422 ,  H04N21/431 ,  H04N21/81 ,  G06F1/16 ,  H04L43/0811 ,  H04N21/462 ,  H04N5/50 ,  H04N7/088

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

公开(公告)号：US20170365608A1

公开(公告)日：2017-12-21

申请号：US15331069

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L29/49 ,  H01L29/08 ,  H01L21/28 ,  H01L23/528 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L27/10823 ,  H01L21/28088 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US10050038B2

公开(公告)日：2018-08-14

申请号：US15331069

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L21/28 ,  H01L23/528 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.

公开(公告)号：US20200177934A1

公开(公告)日：2020-06-04

申请号：US16780356

申请日：2020-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-jin PARK ,  Su-min KIM ,  Seock-young Shim ,  Ji-eun Lee ,  Sung-min Lim

IPC: H04N21/2343 ,  H04N21/41 ,  H04N21/81 ,  H04N21/431 ,  H04N21/422 ,  H04N21/462 ,  H04L12/26 ,  G06F1/16

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

公开(公告)号：US10587903B2

公开(公告)日：2020-03-10

申请号：US15813837

申请日：2017-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-jin Park ,  Su-min Kim ,  Seock-young Shim ,  Ji-eun Lee ,  Sung-min Lim

IPC: H04N21/41 ,  H04N21/2343 ,  H04N21/422 ,  H04N21/431 ,  H04N21/81 ,  G06F1/16 ,  H04L12/26 ,  H04N21/462 ,  H04N5/50 ,  H04N7/088

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

公开(公告)号：US10748905B2

公开(公告)日：2020-08-18

申请号：US16033302

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Sang-kwan Kim ,  Ji-eun Lee ,  Sung-hak Cho ,  Seok-hyang Kim ,  So-yeon Shin

IPC: H01L27/108 ,  H01L21/28 ,  H01L23/528 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate, and a source/drain region in the substrate. Moreover, the semiconductor device includes a gate structure in a recess in the substrate. The gate structure includes a liner that includes a first portion and a second portion on the first portion. The second portion is closer, than the first portion, to the source/drain region. The second portion includes a metal alloy. Methods of forming a semiconductor device are also provided.