公开(公告)号：US20130214413A1

公开(公告)日：2013-08-22

申请号：US13769493

申请日：2013-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sok-Won LEE ,  Joon-Hee LEE ,  Jung-Dal CHOI ,  Seong-Min JO

IPC: H01L23/52 ,  H01L21/768

CPC classification number: H01L23/4821 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/764 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76838 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/4827 ,  H01L23/52 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.

公开(公告)号：US20150061132A1

公开(公告)日：2015-03-05

申请号：US14532484

申请日：2014-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sok-Won LEE ,  Joon-Hee LEE ,  Jung-Dal CHOI ,  Seong-Min JO

IPC: H01L23/482 ,  H01L21/768

CPC classification number: H01L23/4821 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/764 ,  H01L21/768 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76838 ,  H01L21/76885 ,  H01L21/76895 ,  H01L23/4827 ,  H01L23/52 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53295 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.

Abstract translation: 导电线结构及其形成方法包括第一和第二图案结构，绝缘层图案和绝缘夹层。 第一图案结构包括导线图案和硬掩模，并且沿第一方向延伸。 第二图案结构包括第二导电线图案和另一个硬掩模，并且图案结构的至少一部分沿第一方向延伸。 绝缘层图案接触图形结构的端部。 第一图案结构和绝缘层图案在平面图中形成闭合曲线形状，并且第二图案结构和另一绝缘层图案在平面图中形成另一封闭曲线形状。 绝缘中间层覆盖图案结构的上部和绝缘层图案，图案结构之间的空气间隙和绝缘层图案之间的另一气隙。