公开(公告)号：US20180261460A1

公开(公告)日：2018-09-13

申请号：US15825135

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Tae HWANG ,  Moon Kyun SONG ,  Nam Gyu CHO ,  Kyu Min LEE ,  Soo Jung CHOI ,  Yong Ho HA ,  Sang Jin HYUN

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.