公开(公告)号：US20180261460A1

公开(公告)日：2018-09-13

申请号：US15825135

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Tae HWANG ,  Moon Kyun SONG ,  Nam Gyu CHO ,  Kyu Min LEE ,  Soo Jung CHOI ,  Yong Ho HA ,  Sang Jin HYUN

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

公开(公告)号：US20240222453A1

公开(公告)日：2024-07-04

申请号：US18228376

申请日：2023-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui Bok LEE ,  Rak Hwan KIM ,  Jong Min BAEK ,  Moon Kyun SONG

IPC: H01L29/417 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/775

CPC classification number: H01L29/41766 ,  H01L23/5286 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/456 ,  H01L29/775

Abstract: A semiconductor device includes an interlayer insulating film including a first surface and a second surface opposite to the first surface in a first direction; a source/drain pattern provided in the interlayer insulating film; a channel pattern adjacent to the source/drain pattern in a second direction and contacting the source/drain pattern; a front wiring provided on the first surface of the interlayer insulating film; a back wiring provided on the second surface of the interlayer insulating film; and a first connecting via contact and a second connecting via contact which are provided between the source/drain pattern and the back wiring and connected to the source/drain pattern.

公开(公告)号：US20240120274A1

公开(公告)日：2024-04-11

申请号：US18217012

申请日：2023-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui Bok LEE ,  Rak Hwan KIM ,  Jong Min BAEK ,  Moon Kyun SONG

IPC: H01L23/522 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/088

CPC classification number: H01L23/5226 ,  H01L21/823475 ,  H01L23/5283 ,  H01L27/088

Abstract: A semiconductor device a first fin-shaped pattern provided at a first surface of a substrate and extending in a second direction, a first source/drain pattern disposed on the first fin-shaped pattern and connected thereto, a first source/drain contact disposed on the first source/drain pattern and connected thereto, a buried conductive pattern extending through the substrate and connected to the first source/drain contact, a contact connection via disposed between the first source/drain contact and the buried conductive pattern. The contact connection via is directly connected to the first source/drain contact and a back wiring line disposed on a second surface of the substrate and connected to the buried conductive pattern. A width of the contact connection via increases as the contact connection via extends away from the second surface. A width of the first source/drain contact decreases as the first source/drain contact extends away from the second surface of the substrate.

公开(公告)号：US20240222450A1

公开(公告)日：2024-07-04

申请号：US18221479

申请日：2023-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eui Bok LEE ,  Moon Kyun SONG

IPC: H01L29/417 ,  H01L23/48 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L23/481 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a fin-shaped pattern, a field insulating film covering a sidewall of the fin-shaped pattern, a source/drain pattern disposed on an upper surface of the fin-shaped pattern, a source/drain etch stop film extending along an upper surface of the field insulating film and a sidewall of the source/drain pattern, a source/drain contact connected to the source/drain pattern, a buried conductive pattern penetrating through a substrate and connected to the source/drain contact, a portion of the buried conductive pattern being disposed within the field insulating film, and a rear wiring line connected to the buried conductive pattern. The field insulating film includes a first field filling film and a first field stop film. The first field stop film is disposed between the first field filling film and the substrate. The first field stop film includes a material having etch selectivity with respect to the first field filling film.