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1.
公开(公告)号:US11599021B2
公开(公告)日:2023-03-07
申请号:US17736132
申请日:2022-05-04
Applicant: Samsung Electronics Co., Ltd. , Inpria Corporation
Inventor: Chawon Koh , Tsunehiro Nishi , Brian Cardineau , Sangyoon Woo , Jason Stowers , Soo Young Choi
IPC: G03F7/004 , G03F7/11 , H01L21/027 , H01L21/311 , G03F7/20 , G03F7/32
Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.
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公开(公告)号:US11189503B2
公开(公告)日:2021-11-30
申请号:US16420776
申请日:2019-05-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young-Hoo Kim , Kuntack Lee , Yong-Jhin Cho , Chawon Koh , Sunghyun Park , Hyosan Lee , Ji Hoon Cha , Soo Young Choi
Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
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3.
公开(公告)号:US11327398B2
公开(公告)日:2022-05-10
申请号:US16399473
申请日:2019-04-30
Applicant: Samsung Electronics Co., Ltd. , Inpria Corporation
Inventor: Chawon Koh , Tsunehiro Nishi , Brian Cardineau , Sangyoon Woo , Jason Stowers , Soo Young Choi
IPC: G03F7/004 , G03F7/11 , H01L21/027 , H01L21/311 , G03F7/20 , G03F7/32
Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.
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