公开(公告)号：US12198923B2

公开(公告)日：2025-01-14

申请号：US17660449

申请日：2022-04-25

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Hae-Won Choi ,  Anton Koriakin ,  Sangjine Park Park ,  Keonyoung Kim ,  Sukhoon Kim ,  Seohyun Kim ,  Young-Hoo Kim ,  Kuntack Lee ,  Jihoon Jeong

IPC: H01L21/02 ,  C11D1/72 ,  C11D3/43 ,  H01L21/67

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

公开(公告)号：US11742221B2

公开(公告)日：2023-08-29

申请号：US17376369

申请日：2021-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Shin ,  Seok-Hoon Kim ,  Young-Hoo Kim ,  In-Gi Kim ,  Tae-Hong Kim ,  Sung-Hyun Park ,  Jin-Woo Lee ,  Ji-Hoon Cha ,  Yong-Jun Choi

IPC: H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  G02B27/09 ,  B23K26/352 ,  B08B7/00 ,  H01L29/66 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/67034 ,  B08B7/0042 ,  B23K26/352 ,  G02B27/0955 ,  H01J37/3244 ,  H01J37/32568 ,  H01L21/02098 ,  H01J2237/335 ,  H01L29/66545 ,  H01L29/66795 ,  H10B41/27 ,  H10B43/27

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

公开(公告)号：US12165866B2

公开(公告)日：2024-12-10

申请号：US17318629

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Park ,  Seo Hyun Kim ,  Seung Ho Kim ,  Young Chan Kim ,  Young-Hoo Kim ,  Tae-Hong Kim ,  Hyun Woo Nho ,  Seung Min Shin ,  Kun Tack Lee ,  Hun Jae Jang

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/00 ,  G03F7/30

Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

公开(公告)号：US11721565B2

公开(公告)日：2023-08-08

申请号：US16690498

申请日：2019-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Jun Choi ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Sung Hyun Park ,  Seung Min Shin ,  Kun Tack Lee ,  Jinwoo Lee ,  Hun Jae Jang ,  Ji Hoon Cha

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08

CPC classification number: H01L21/67167 ,  B08B3/08 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/68707

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

公开(公告)号：US10825698B2

公开(公告)日：2020-11-03

申请号：US15845236

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Kuntack Lee

IPC: H01L21/67 ,  B08B3/08 ,  H01L21/02 ,  F26B3/00 ,  F26B5/00

Abstract: Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

公开(公告)号：US20180366348A1

公开(公告)日：2018-12-20

申请号：US15845236

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Kuntack Lee

IPC: H01L21/67 ,  B08B3/08 ,  F26B3/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B2203/007 ,  F26B3/00 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67248

Abstract: Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

公开(公告)号：US10029332B2

公开(公告)日：2018-07-24

申请号：US14706546

申请日：2015-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hoo Kim ,  Il-Sang Lee ,  Yong-sun Ko ,  Chang-Gil Ryu ,  Kun-Tack Lee ,  Hyo-San Lee

IPC: H01L21/00 ,  B23K26/146 ,  B08B7/00 ,  B08B3/10 ,  C11D11/00 ,  H01L21/67 ,  H01L21/687

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

公开(公告)号：US12211716B2

公开(公告)日：2025-01-28

申请号：US17664243

申请日：2022-05-20

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Jaeseong Lee ,  Kihoon Choi ,  Hae-Won Choi ,  Jihoon Jeong ,  Seohyun Kim ,  Young-Hoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

公开(公告)号：US11648594B2

公开(公告)日：2023-05-16

申请号：US16890490

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC classification number: B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20230052006A1

公开(公告)日：2023-02-16

申请号：US17703264

申请日：2022-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hoon JEONG ,  Young-Hoo Kim ,  Sang Jine Park ,  Ji Hwan Park

IPC: G03F7/32 ,  H01L21/67 ,  H01L21/027

Abstract: An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.