公开(公告)号：US20230313040A1

公开(公告)日：2023-10-05

申请号：US18194908

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung Hwang ,  Byungjoon Kang ,  Daihyun Kim ,  Sungmin Kim ,  Hwang Suk Kim ,  Mihyun Park ,  Jungmin Oh ,  Hyosan Lee ,  Byoungki Choi

IPC: C09K13/00 ,  H01L21/311

CPC classification number: C09K13/00 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US20210115334A1

公开(公告)日：2021-04-22

申请号：US16946495

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd. ,  Dongwoo Fine-Chem Co., Ltd.

Inventor： Kihun Song ,  Jungmin Oh ,  Hyosan Lee ,  Hyojoong Yoon ,  Minjung Kim ,  Jongwook Baek

IPC: C09K13/06 ,  H01L21/3213 ,  H01L27/108

Abstract: Metal-containing film etchant compositions may include hydrogen peroxide (H2O2), a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water. Manufacturing methods of an integrated circuit (IC) may include performing a dry etch process on a conductive structure including a metal nitride film and a metal film to form a conductive pattern intermediate product and performing a wet etch process on the conductive pattern intermediate product using an etching atmosphere providing a higher etch selectivity with respect to the metal nitride film than the metal film. The etching atmosphere may include an etchant composition including hydrogen peroxide, a phosphoric acid compound, a heterocyclic organic amine compound including at least one heteroatom in a ring, and water.

公开(公告)号：US10388537B2

公开(公告)日：2019-08-20

申请号：US15428963

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chae Lyoung Kim ,  Tae-Hong Kim ,  Jung-Min Oh ,  Yungjun Kim ,  Ingi Kim ,  Boun Yoon ,  Hyosan Lee ,  Sol Han

IPC: B08B3/02 ,  H01L21/306 ,  B24B37/20 ,  B24B53/017 ,  H01L21/02 ,  H01L21/67

Abstract: A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

公开(公告)号：US10361100B2

公开(公告)日：2019-07-23

申请号：US15368988

申请日：2016-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Kuntack Lee ,  Yongmyung Jun ,  Yong-Jhin Cho

IPC: H01L21/67 ,  H01L21/02 ,  F26B5/04

Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

公开(公告)号：US11189503B2

公开(公告)日：2021-11-30

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo Kim ,  Kuntack Lee ,  Yong-Jhin Cho ,  Chawon Koh ,  Sunghyun Park ,  Hyosan Lee ,  Ji Hoon Cha ,  Soo Young Choi

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US11168253B2

公开(公告)日：2021-11-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu Jeon ,  Jungmin Oh ,  Hyosan Lee ,  Hoon Han ,  Jinkyu Roh ,  Hyojoong Yoon ,  Dongwun Shin

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/04 ,  H01L21/302 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

公开(公告)号：US20210217636A1

公开(公告)日：2021-07-15

申请号：US17217417

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US10186427B2

公开(公告)日：2019-01-22

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan Kim ,  Ingi Kim ,  Mihyun Park ,  Young-Hoo Kim ,  Ui-soon Park ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/311 ,  H01L21/67

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

公开(公告)号：US09165759B2

公开(公告)日：2015-10-20

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won Bae ,  Yongsun Ko ,  Byoungho Kwon ,  Bo yun Kim ,  Hongjin Kim ,  Sungoh Park ,  Kuntack Lee ,  Hyosan Lee ,  Sol Han

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US12234400B2

公开(公告)日：2025-02-25

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun Park ,  Jaesung Lee ,  Junghun Lim ,  Jungmin Oh ,  Sangwon Bae ,  Hyosan Lee

IPC: C09K13/10 ,  C09K13/08 ,  H01L21/306 ,  H10B12/00

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt % to about 14 wt % of an oxidant, about 0.01 wt % to about 5 wt % of a fluorine compound, about 0.01 wt % to about 5 wt % of an amine compound, about 0.01 wt % to about 1 wt % of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt % to about 90 wt % of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.