公开(公告)号：US11600569B2

公开(公告)日：2023-03-07

申请号：US17230509

申请日：2021-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Hyun Bark ,  Sang-Hoon Ahn ,  Young-Bae Kim ,  Hyeok-Sang Oh ,  Woo-Jin Lee ,  Hoon-Seok Seo ,  Sung-Jin Kang

IPC: H01L23/48 ,  H01L23/532 ,  H01L29/16 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L23/485 ,  H01L21/8234

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

公开(公告)号：US10276505B2

公开(公告)日：2019-04-30

申请号：US15846498

申请日：2017-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Bae Kim ,  Sang-Hoon Ahn ,  Eui-Bok Lee ,  Su-Hyun Bark ,  Hyeok-Sang Oh ,  Woo-Jin Lee ,  Hoon-Seok Seo ,  Sung-Jin Kang

IPC: H01L29/00 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: An integrated circuit (IC) device includes a lower wiring structure including a lower metal film. The lower wiring structure penetrates at least a portion of a first insulating film disposed over a substrate. The IC device further includes a capping layer covering a top surface of the lower metal film, a second insulating film covering the capping layer, an upper wiring structure penetrating the second insulating film and the capping layer, and electrically connected to the lower metal film, and an air gap disposed between the lower metal film and the second insulating film. The air gap has a width defined by a distance between the capping layer and the upper wiring structure.

公开(公告)号：US11049810B2

公开(公告)日：2021-06-29

申请号：US16448666

申请日：2019-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Hyun Bark ,  Sang-Hoon Ahn ,  Young-Bae Kim ,  Hyeok-Sang Oh ,  Woo-Jin Lee ,  Hoon-Seok Seo ,  Sung-Jin Kang

IPC: H01L23/48 ,  H01L23/532 ,  H01L29/16 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L23/485 ,  H01L21/8234

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

公开(公告)号：US20190311992A1

公开(公告)日：2019-10-10

申请号：US16448666

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su-Hyun Bark ,  Sang-Hoon Ahn ,  Young-Bae Kim ,  Hyeok-Sang Oh ,  Woo-Jin Lee ,  Hoon-Seok Seo ,  Sung-Jin Kang

IPC: H01L23/532 ,  H01L23/522 ,  H01L29/16 ,  H01L21/768 ,  H01L23/528 ,  H01L21/311

Abstract: An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.