公开(公告)号：US20230247823A1

公开(公告)日：2023-08-03

申请号：US18056085

申请日：2022-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Jae Seong Park ,  Youngseok Kim ,  Young Sin Kim ,  Daeyoung Moon ,  Keum Joo Lee ,  Sung-Wook Jung ,  Sungduk Hong ,  Suhwan Hwang

IPC: H01L29/94 ,  G11C5/06

CPC classification number: H01L27/10814 ,  G11C5/063 ,  H01L27/10897

Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area defined by a periphery of the cell area, the cell area including a dummy cell area and a normal cell area, and an active area defined by a cell element isolation film. The device includes a cell area separation film defining the cell area in the substrate, the dummy cell area defining a boundary with the cell area separation film between the normal cell area and the cell area separation film. The device includes a normal bit-line on the normal cell area and extending in a first direction, a dummy bit-line group on the dummy cell area, the dummy bit-line group including a plurality of dummy bit-lines extending in the first direction, and a plurality of storage contacts connected to the active area and located along a second direction perpendicular to the first direction.