公开(公告)号：US11646203B2

公开(公告)日：2023-05-09

申请号：US16925532

申请日：2020-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong Lee ,  Minkyu Park ,  Insun Yi ,  Beomseok Kim ,  Youngseok Kim ,  Kuntack Lee

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/108 ,  H01L27/115 ,  H01J37/32 ,  C23C16/511 ,  C23C16/46 ,  C23C16/40

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/46 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32192 ,  H01J37/32724 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/10888 ,  H01L27/115 ,  H01L29/6681 ,  H01J2237/332 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02598

Abstract: A thin film formation apparatus includes a chamber, a platen disposed within the chamber, a heater configured to heat the platen within the chamber, a gas inlet communicating with an interior of the chamber and configured to supply a reducing gas and inert gas to the interior of the chamber, a target disposed within the chamber and spatially separated from the platen, and a microwave plasma source disposed adjacent to the target. The reducing gas includes at least one of hydrogen (H2) and deuterium (D2).

公开(公告)号：US20230247823A1

公开(公告)日：2023-08-03

申请号：US18056085

申请日：2022-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Jae Seong Park ,  Youngseok Kim ,  Young Sin Kim ,  Daeyoung Moon ,  Keum Joo Lee ,  Sung-Wook Jung ,  Sungduk Hong ,  Suhwan Hwang

IPC: H01L29/94 ,  G11C5/06

CPC classification number: H01L27/10814 ,  G11C5/063 ,  H01L27/10897

Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area defined by a periphery of the cell area, the cell area including a dummy cell area and a normal cell area, and an active area defined by a cell element isolation film. The device includes a cell area separation film defining the cell area in the substrate, the dummy cell area defining a boundary with the cell area separation film between the normal cell area and the cell area separation film. The device includes a normal bit-line on the normal cell area and extending in a first direction, a dummy bit-line group on the dummy cell area, the dummy bit-line group including a plurality of dummy bit-lines extending in the first direction, and a plurality of storage contacts connected to the active area and located along a second direction perpendicular to the first direction.

公开(公告)号：US11129278B2

公开(公告)日：2021-09-21

申请号：US16206029

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwajoong Jung ,  Manho Kim ,  Youngseok Kim ,  Hyungjin Rho ,  Chiyoung Park ,  Taeyun Kim ,  Yonghwan Choi ,  Kihuk Lee

IPC: G02B7/02 ,  H05K1/18 ,  H05K1/11 ,  G03B17/02 ,  G02B7/09 ,  G02B27/64 ,  G03B13/36 ,  G03B5/00 ,  G02B7/08

Abstract: A camera module is provided. The camera includes a circuit board to which an image sensor disposed is disposed, one or more first conductive portions at one or more regions of the circuit board, one or more elastic connectors, including an elastic member and a metal film surrounding at least part of an outer portion of the elastic member, the elastic connector is disposed on the first conductive region, a lens device including one or more lenses and a driver capable of moving the lens device, a housing which accommodates the lens device, and a second conductive portion in one or more regions of the housing. The housing may be disposed above the elastic connector such that the second conductive portion is electrically coupled to the first conductive portion due to a contact with the elastic connector.

公开(公告)号：US10211210B2

公开(公告)日：2019-02-19

申请号：US15603668

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon Ma ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US09996658B2

公开(公告)日：2018-06-12

申请号：US15433835

申请日：2017-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngseok Kim ,  Noyoung Chung

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method for manufacturing a semiconductor device includes obtaining a design layout for a target layer of an optical proximity correction process, the design layout including a first block and a second block being a repetition block of the first block, dividing the design layout into a plurality of patches, performing the optical proximity correction process on the patches of the first block, applying corrected patches of the first block to the patches of the second block, respectively, forming a correction layout by performing the optical proximity correction process on boundary patches of the second block, fabricating a photomask corresponding to the correction layout, and forming patterns on a substrate corresponding to the photomask. Each of the patches is a standard unit on which the optical proximity correction process is performed.

公开(公告)号：US20220397829A1

公开(公告)日：2022-12-15

申请号：US17719576

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dahan Kang ,  Youngseok Kim

IPC: G03F7/20 ,  G05B19/418 ,  G05B19/401

Abstract: A method for monitoring a process variation index includes operations of: obtaining a target parameter to be monitored and a reference parameter used to increase goodness of fit among structural parameters predicted by measuring a structure in a specific location of a wafer; obtaining a reference parameter set in a reference model; and calculating a process variation index capable of confirming a structural change of the structure according to a change in process conditions using the structural parameter and the reference parameter.

公开(公告)号：US11411610B2

公开(公告)日：2022-08-09

申请号：US16991666

申请日：2020-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngseok Kim ,  Sanghyo Lee

IPC: H04B5/00

Abstract: A near field communication (NFC) device includes a resonator including an antenna and a matching circuit, a transmitter and a frequency detector. The transmitter generates a sensing voltage signal at the resonator. With respect to a plurality of measurement periods where each measurement period includes a turn-on period and a turn-off period, the transmitter is enabled to output a radio frequency (RF) signal to the resonator during the turn-on period and disabled during the turn-off period. The frequency detector detects a resonance frequency of the resonator based on the sensing voltage signal. The resonance frequency is accurately detected by measuring the resonance frequency during the plurality of measurement periods. In addition, the resonance frequency is efficiently detected by generating the sensing voltage signal using the transmitter established in the NFC device.

公开(公告)号：US20200119021A1

公开(公告)日：2020-04-16

申请号：US16711833

申请日：2019-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwon MA ,  Jun-Noh Lee ,  Dong-Hyun IM ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/485

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US20170345824A1

公开(公告)日：2017-11-30

申请号：US15603668

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon MA ,  Jun-Noh Lee ,  Dong-Hyun Im ,  Youngseok Kim ,  Kongsoo Lee

IPC: H01L27/108 ,  H01L21/768

CPC classification number: H01L27/10888 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76895 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/10885

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.

公开(公告)号：US12032489B2

公开(公告)日：2024-07-09

申请号：US18101352

申请日：2023-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngseok Kim ,  Junbeom Jang ,  Seongmin Jo

IPC: G06F12/10 ,  G06F12/1009 ,  G06F12/1027

CPC classification number: G06F12/1027 ,  G06F12/1009

Abstract: Disclosed is an input output memory management unit (IOMMU) including a first memory device including a translation lookaside buffer (TLB), a second memory device including a translation group table, a plurality of translation request controllers, each of which is configured to perform an address translation operation, and an allocation controller. The allocation controller may be configured to receive a first request including a first page table identifier (ID), a first virtual page number, and a first page offset, looks up the TLB by using the first page table ID and the first virtual page number, look up the translation group table by using the first page table ID and the first virtual page number when a TLB miss for the first request occurs, and allocate a first translation request controller among the plurality of translation request controllers based on a translation group table miss for the first request.