公开(公告)号：US09112055B2

公开(公告)日：2015-08-18

申请号：US13733312

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Woo Hyun ,  Sun-Ghil Lee

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L21/823807 ,  H01L21/02362 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/7834

Abstract: A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底上执行卤素前离子注入，在半导体衬底的整个上表面上形成第一外延层，在第一外延层的整个表面上形成第二外延层，以及 在所述第二外延层的有源区上形成晶体管。 在用于形成晶体管的工艺的作用下，第一外延层防止注入在卤素前注入工艺中的半导体衬底中的离子扩散到第二外延层中。

公开(公告)号：US08604551B2

公开(公告)日：2013-12-10

申请号：US13842002

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Woo Hyun ,  Yu-Gyun Shin ,  Sun-Ghil Lee ,  Hong-Sik Yoon

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second past of the source/drain of the find region is different from the cross-sectional shape of the second part of the source/drain of the second region.

Abstract translation: 半导体器件包括衬底，第一区域和第二区域。 第一区域和第二区域中的每一个包括沟槽，包括具有第一部分和第二部分的源极/漏极的外延层，第一部分从衬底的顶表面延伸到源极/漏极的顶表面， 第二部分从衬底的顶表面延伸到沟槽中的源极/漏极的底表面。 第一区域的源极/漏极的第一部分的截面形状与第二区域的源极/漏极的第一部分的横截面形状相同。 查找区域的源极/漏极的第二过去的截面形状与第二区域的源极/漏极的第二部分的截面形状不同。

公开(公告)号：US20130280871A1

公开(公告)日：2013-10-24

申请号：US13733312

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Woo Hyun ,  Sun-Ghil Lee

IPC: H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/823807 ,  H01L21/02362 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/7834

Abstract: A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底上执行卤素前离子注入，在半导体衬底的整个上表面上形成第一外延层，在第一外延层的整个表面上形成第二外延层，以及 在所述第二外延层的有源区上形成晶体管。 在用于形成晶体管的工艺的作用下，第一外延层防止注入在卤素前注入工艺中的半导体衬底中的离子扩散到第二外延层中。