公开(公告)号：US20130280871A1

公开(公告)日：2013-10-24

申请号：US13733312

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Woo Hyun ,  Sun-Ghil Lee

IPC: H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/823807 ,  H01L21/02362 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/7834

Abstract: A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底上执行卤素前离子注入，在半导体衬底的整个上表面上形成第一外延层，在第一外延层的整个表面上形成第二外延层，以及 在所述第二外延层的有源区上形成晶体管。 在用于形成晶体管的工艺的作用下，第一外延层防止注入在卤素前注入工艺中的半导体衬底中的离子扩散到第二外延层中。

公开(公告)号：US08604551B2

公开(公告)日：2013-12-10

申请号：US13842002

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Woo Hyun ,  Yu-Gyun Shin ,  Sun-Ghil Lee ,  Hong-Sik Yoon

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, a first region and a second region. Each of the first region and second region includes a trench, an epitaxial layer including a source/drain having a first part and a second part, the first part extending from a top surface of the substrate to a top surface of the source/drain and the second part extending from the top surface of the substrate to a bottom surface of the source/drain in the trench. The cross-sectional shape of the first part of the source/drain of the first region is the same as the cross-sectional shape of the first part of the source/drain of the second region. The cross-sectional shape of the second past of the source/drain of the find region is different from the cross-sectional shape of the second part of the source/drain of the second region.

Abstract translation: 半导体器件包括衬底，第一区域和第二区域。 第一区域和第二区域中的每一个包括沟槽，包括具有第一部分和第二部分的源极/漏极的外延层，第一部分从衬底的顶表面延伸到源极/漏极的顶表面， 第二部分从衬底的顶表面延伸到沟槽中的源极/漏极的底表面。 第一区域的源极/漏极的第一部分的截面形状与第二区域的源极/漏极的第一部分的横截面形状相同。 查找区域的源极/漏极的第二过去的截面形状与第二区域的源极/漏极的第二部分的截面形状不同。

公开(公告)号：US20130171818A1

公开(公告)日：2013-07-04

申请号：US13728622

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Bum Kim ,  Young-Pil Kim ,  Kwan-Heum Lee ,  Sun-Ghil Lee

IPC: H01L21/285

CPC classification number: H01L21/285 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76889 ,  H01L27/10855 ,  H01L28/91

Abstract: In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a first heat treatment under a first temperature and an instantaneous second heat treatment under a second temperature higher than the first temperature. Thus, the metal silicide layer has a thermo-stable crystal structure and little or no agglomeration occurs on the metal silicide layer in the high temperature process. Accordingly, the sheet resistance of the ohmic layer may not increase in spite of the subsequent high temperature process.

Abstract translation: 在形成DRAM器件的欧姆层的方法中，通过在第一温度和瞬时第二次加热下的第一次热处理将存储节点接触插塞和电容器的下部电极之间的金属硅化物层形成为欧姆层 在比第一温度高的第二温度下进行处理。 因此，金属硅化物层具有热稳定的晶体结构，并且在高温工艺中在金属硅化物层上几乎或不发生聚集。 因此，尽管随后的高温处理，欧姆层的薄层电阻也可能不增加。

公开(公告)号：US09112055B2

公开(公告)日：2015-08-18

申请号：US13733312

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Woo Hyun ,  Sun-Ghil Lee

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/02 ,  H01L29/51

CPC classification number: H01L21/823807 ,  H01L21/02362 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628 ,  H01L29/7834

Abstract: A method of fabricating a semiconductor device includes performing pre-halo ion implantation on a semiconductor substrate, forming a first epitaxial layer over the entire upper surface of the semiconductor substrate, forming a second epitaxial layer over the entire surface of the first epitaxial layer, and forming a transistor at an active region of the second epitaxial layer. The first epitaxial layer prevents the ions implanted in the semiconductor substrate in the pre-halo implantation process from diffused into the second epitaxial layer under the effects of a process used to form the transistor.

Abstract translation: 一种制造半导体器件的方法包括在半导体衬底上执行卤素前离子注入，在半导体衬底的整个上表面上形成第一外延层，在第一外延层的整个表面上形成第二外延层，以及 在所述第二外延层的有源区上形成晶体管。 在用于形成晶体管的工艺的作用下，第一外延层防止注入在卤素前注入工艺中的半导体衬底中的离子扩散到第二外延层中。