公开(公告)号：US20220383932A1

公开(公告)日：2022-12-01

申请号：US17819289

申请日：2022-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggeun Do ,  Youngsik Kim ,  Gongheum Han ,  Sangyun Kim ,  Seunghyun Cho

IPC: G11C11/408 ,  G11C5/06 ,  G11C11/406 ,  G11C11/4074

Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

公开(公告)号：US11450376B2

公开(公告)日：2022-09-20

申请号：US17038488

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggeun Do ,  Youngsik Kim ,  Gongheum Han ,  Sangyun Kim ,  Seunghyun Cho

IPC: G11C11/408 ,  G11C5/06 ,  G11C11/406 ,  G11C11/4074

Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

公开(公告)号：US20210225425A1

公开(公告)日：2021-07-22

申请号：US17038488

申请日：2020-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggeun Do ,  Youngsik Kim ,  Gongheum Han ,  Sangyun Kim ,  Seunghyun Cho

IPC: G11C11/408 ,  G11C11/4074 ,  G11C11/406 ,  G11C5/06

Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

公开(公告)号：US12198749B2

公开(公告)日：2025-01-14

申请号：US17819289

申请日：2022-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunggeun Do ,  Youngsik Kim ,  Gongheum Han ,  Sangyun Kim ,  Seunghyun Cho

IPC: G11C11/408 ,  G11C5/06 ,  G11C11/406 ,  G11C11/4074

Abstract: A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.