公开(公告)号：US20160237558A1

公开(公告)日：2016-08-18

申请号：US15017753

申请日：2016-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hwansoo SUH ,  Youngjae SONG ,  Qinke WU ,  Sungjoo LEE ,  Minwoo KIM ,  Sangwoo PARK

IPC: C23C16/30 ,  C01B21/064 ,  C23C16/02

CPC classification number: C01B21/064 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/342

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm.

Abstract translation: 无缝六边形h-BN原子单层薄膜具有无缝合并的多个h-BN晶粒的假单晶结构。 每个h-BN颗粒的尺寸在约10μm至约1,000μm的范围内。

公开(公告)号：US20220271057A1

公开(公告)日：2022-08-25

申请号：US17666448

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yong PARK ,  Jin-Hong PARK ,  Sungjoo LEE

IPC: H01L27/11597 ,  H01L29/51 ,  H01L29/78

Abstract: A semiconductor memory device capable of improving performance by the use of a charge storage layer including a ferroelectric material is provided. The semiconductor memory device includes a substrate, a tunnel insulating layer contacting the substrate, on the substrate, a charge storage layer contacting the tunnel insulating layer and including a ferroelectric material, on the tunnel insulating layer, a barrier insulating layer contacting the charge storage layer, on the charge storage layer, and a gate electrode contacting the barrier insulating layer, on the barrier insulating layer.