公开(公告)号：US20140148007A1

公开(公告)日：2014-05-29

申请号：US14170062

申请日：2014-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hwang KIM ,  Sunpil YOUN ,  Sangwon KIM ,  Kwang-chul CHOI ,  Tae Hong MIN

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/563 ,  H01L21/768 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49816 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.

Abstract translation: 半导体器件包括具有第一侧和第二侧的基板，使得第一和第二面彼此面对，贯穿基板的通孔塞，绝缘膜衬垫和防污染膜。 绝缘膜衬垫位于通孔插塞和衬底之间，并且绝缘膜衬套相对于第二侧具有凹陷表面。 防污染膜覆盖第二面，防污染膜位于凹陷表面上，并且在通孔插塞和基底之间。