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1.发明公开公开(公告)号：US20230269942A1
公开(公告)日：2023-08-24
申请号：US18096257
申请日：2023-01-12
发明人： Myunghun WOO , Jooheon KANG , Hyunmog PARK , Jongho WOO , Suseong NOH , Youngji NOH
摘要： A semiconductor device includes a gate stack structure including alternately stacked insulating patterns and conductive patterns; a memory channel structure extending through the gate stack structure; and a bit line pad on the memory channel structure, wherein the memory channel structure includes a variable resistance layer, a channel layer surrounding the variable resistance layer, and a channel insulating layer surrounding the channel layer, and a bottom surface of the bit line pad contacts a top surface of the variable resistance layer, a top surface of the channel layer, and a top surface of the channel insulating layer.
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公开(公告)号：US20230165001A1
公开(公告)日：2023-05-25
申请号：US17989061
申请日：2022-11-17
发明人： Jinwoo LEE , Jooheon KANG , Donggeon GU , Doyoon KIM , Yumin KIM , Suseong NOH , Changyup PARK , Hyunjae SONG , Dongho AHN , Myunghun WOO
CPC分类号： H01L27/11582 , H01L23/5283 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/11565 , H01L27/1157
摘要： A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.
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