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公开(公告)号：US20240065001A1
公开(公告)日：2024-02-22
申请号：US18299403
申请日：2023-04-12
发明人： Seyun KIM , Jooheon KANG , Sunho KIM , Yumin KIM , Garam PARK , Hyunjae SONG , Dongho AHN , Seungyeul YANG , Myunghun WOO , Jinwoo LEE
IPC分类号： H10B63/00
CPC分类号： H10B63/845 , H10B63/34
摘要： Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
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公开(公告)号：US20220085286A1
公开(公告)日：2022-03-17
申请号：US17384933
申请日：2021-07-26
发明人： Jeonghee PARK , Dongho AHN , Wonjun PARK
摘要： A semiconductor device includes a first conductive line on a lower structure and extending in a first horizontal direction; a second conductive line on the first conductive line and extending in a second horizontal direction, the second horizontal direction being perpendicular to the first horizontal direction; and a memory cell structure between the first conductive line and the second conductive line. The memory cell may structure include a data storage material pattern and a selector material pattern overlapping the data storage material pattern in a vertical direction. The data storage material pattern may include a phase change material layer of InαGeβSbγTeδ. In the phase change material layer of InαGeβSbγTeδ, a sum of α and β may be lower than about 30 at. %, and a sum of γ and δ may be higher than about 70 at. %.
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公开(公告)号：US20230354725A1
公开(公告)日：2023-11-02
申请号：US18349433
申请日：2023-07-10
发明人： Kiyeon YANG , Dongho AHN , Changseung LEE
CPC分类号： H10N70/8828 , H10B63/24 , H10B63/84 , H10N70/066 , H10N70/231 , H10N70/8413
摘要： A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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4.发明申请公开(公告)号：US20230091136A1
公开(公告)日：2023-03-23
申请号：US17835508
申请日：2022-06-08
发明人： Kiyeon YANG , Segab KWON , Hajun SUNG , Dongho AHN , Changseung LEE
摘要： Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element.
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公开(公告)号：US20220173316A1
公开(公告)日：2022-06-02
申请号：US17330950
申请日：2021-05-26
发明人： Kiyeon YANG , Dongho AHN , Changseung LEE
摘要： Provided is a semiconductor apparatus including a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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公开(公告)号：US20220069011A1
公开(公告)日：2022-03-03
申请号：US17209660
申请日：2021-03-23
发明人： Dongho AHN , Segab KWON , Chungman KIM , Kwangmin PARK , Zhe WU , Seunggeun YU , Wonjun LEE , Jabin LEE , Jinwoo LEE
摘要： A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.
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公开(公告)号：US20240188305A1
公开(公告)日：2024-06-06
申请号：US18526031
申请日：2023-12-01
发明人： Jinwoo LEE , Hyunchul SOHN , Jeongwoo LEE , Jaeyeon KIM , Kwangmin PARK , Dongho AHN , Jinmyung CHOI
摘要： A memory device includes a substrate; a plurality of first conductive lines on the substrate and extending in a first direction; a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction crossing the first direction; and a plurality of first memory cells respectively arranged between the plurality of first conductive lines and the plurality of second conductive lines, wherein each first memory cell of the plurality of first memory cells includes a switching device and a variable resistance material pattern, and the switching device includes a material having a composition of LaxNi1-xOy, in which 0.13≤x≤0.30 and 0.9≤y≤1.5.
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公开(公告)号：US20220406844A1
公开(公告)日：2022-12-22
申请号：US17568866
申请日：2022-01-05
发明人： Chungman KIM , Bonwon KOO , Dongho AHN , Kiyeon YANG , Zhe WU , Chang Seung LEE
摘要： A resistive memory device including a resistive memory pattern; and a selection element pattern electrically connected to the resistive memory pattern, the selection element pattern including a chalcogenide switching material and at least one metallic material, the chalcogenide switching material including germanium, arsenic, and selenium, and the at least one metallic material including aluminum, strontium, or indium, wherein the selection element pattern includes an inhomogeneous material layer in which content of the at least one metallic material in the selection element pattern is variable according to a position within the selection element pattern.
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公开(公告)号：US20220149114A1
公开(公告)日：2022-05-12
申请号：US17362075
申请日：2021-06-29
发明人： Kiyeon YANG , Bonwon KOO , Segab KWON , Chungman KIM , Yongyoung PARK , Dongho AHN , Seunggeun YU , Changseung LEE
摘要： Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).
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公开(公告)号：US20180019392A1
公开(公告)日：2018-01-18
申请号：US15451961
申请日：2017-03-07
发明人： Jinwoo LEE , Jeonghee PARK , Dongho AHN , Zhe WU , Heeju SHIN , Ja bin LEE
CPC分类号： H01L45/141 , H01L43/08 , H01L43/10 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/16
摘要： A semiconductor memory device including first lines and second lines overlapping and intersecting each other, variable resistance memory elements disposed at intersections between the first lines and the second lines, and switching elements disposed between the variable resistance memory elements and the first lines. At least one of the switching elements includes first and second chalcogenide compound layers, and conductive nano-dots disposed between the first and second chalcogenide compound layers.
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