公开(公告)号：US20180166529A1

公开(公告)日：2018-06-14

申请号：US15831757

申请日：2017-12-05

申请人： Samsung Electronics Co., Ltd.

发明人： Hyesung Park ,  Suyoung Shin ,  Jonghyuk Park ,  Boun Yoon ,  llyoung Yoon ,  Sangyeol Kang ,  SeungHo Park ,  Yanghee Lee ,  Wooin Lee

IPC分类号： H01L49/02 ,  H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/90

摘要： A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor substrate including a cell area and a peripheral area, a plurality of bottom electrodes on the semiconductor substrate at the cell area, a dielectric layer conformally covering top surfaces and sidewalls of the bottom electrodes, and an upper electrode on the dielectric layer and filling between the bottom electrodes may be provided. A surface roughness of a top surface of the upper electrode may be less than a surface roughness of a side surface of the upper electrode.