公开(公告)号：US09994737B2

公开(公告)日：2018-06-12

申请号：US15389800

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: H01L21/02 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/768

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

公开(公告)号：US20170107405A1

公开(公告)日：2017-04-20

申请号：US15389800

申请日：2016-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

公开(公告)号：US20160137880A1

公开(公告)日：2016-05-19

申请号：US14864322

申请日：2015-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkyun Kim ,  Yun-Jeong Kim ,  SeungHo Park

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/02126 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76895

Abstract: Provided are slurry compounds for polishing an SOH organic layer and methods of fabricating a semiconductor device using the same. The slurry compound may include a polishing particle, an oxidizing agent including at least one selected from the group consisting of a nitrate, a sulfate, a chlorate, a perchlorate, a chlorine, and a peroxide, and a polishing accelerator.

Abstract translation: 提供了用于抛光SOH有机层的浆料化合物和使用其的半导体器件的制造方法。 浆料化合物可以包括抛光颗粒，包括选自硝酸盐，硫酸盐，氯酸盐，高氯酸盐，氯和过氧化物中的至少一种的氧化剂和抛光促进剂。

公开(公告)号：US20180166529A1

公开(公告)日：2018-06-14

申请号：US15831757

申请日：2017-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyesung Park ,  Suyoung Shin ,  Jonghyuk Park ,  Boun Yoon ,  llyoung Yoon ,  Sangyeol Kang ,  SeungHo Park ,  Yanghee Lee ,  Wooin Lee

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/84 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/90

Abstract: A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor substrate including a cell area and a peripheral area, a plurality of bottom electrodes on the semiconductor substrate at the cell area, a dielectric layer conformally covering top surfaces and sidewalls of the bottom electrodes, and an upper electrode on the dielectric layer and filling between the bottom electrodes may be provided. A surface roughness of a top surface of the upper electrode may be less than a surface roughness of a side surface of the upper electrode.