公开(公告)号：US20170110576A1

公开(公告)日：2017-04-20

申请号：US15290240

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Soo KIM ,  Gi-Gwan PARK ,  Sang-Koo KANG ,  Koung-Min RYU ,  Jae-Hoon LEE ,  Tae-Won HA

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7831 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/66484 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/7854

Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.

公开(公告)号：US20190088779A1

公开(公告)日：2019-03-21

申请号：US16193521

申请日：2018-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Soo KIM ,  Gi-Gwan PARK ,  Sang-Koo KANG ,  Koung-Min RYU ,  Jae-Hoon LEE ,  Tae-Won HA

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7831 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/66484 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/7854

Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.

公开(公告)号：US20170117192A1

公开(公告)日：2017-04-27

申请号：US15215951

申请日：2016-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-Ki Min ,  Gi-Gwan PARK ,  Sang-Koo KANG ,  Sung-Sao KIM ,  Ju-Youn KIM ,  Koung-Min RYU ,  Jae-Hoon LEE ,  Tae-Won HA

IPC: H01L21/8238 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L21/823864 ,  H01L21/28114 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/82385 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/42376 ,  H01L29/7854

Abstract: A semiconductor device may include a first gate electrode being formed on a substrate and having a first ratio of a width of an upper surface to a width of a lower surface, a second gate electrode being formed on the substrate and having a second ratio of the width of the upper surface to the width of the lower surface, wherein the second ratio is less than the first ratio, a first gate spacer being formed on a sidewall of the first gate electrode, a second gate spacer being formed on a sidewall of the second gate electrode and an interlayer insulating film covering the first gate spacer and the second gate spacer.