SEMICONDUCTOR PACKAGE
    4.
    发明申请

    公开(公告)号:US20230029098A1

    公开(公告)日:2023-01-26

    申请号:US17730550

    申请日:2022-04-27

    Abstract: A semiconductor package including a first substrate including a first bump pad and a filling compensation film (FCF) around the first bump pad; a second substrate facing the first substrate and including a second bump pad; a bump structure (BS) in contact with the first bump pad and the second bump pad; and a non-conductive film (NCF) surrounding the BS and between the first substrate and the second substrate, wherein the NCF covers an upper surface and an edge of the FCF.

    SEMICONDUCTOR PACKAGE INCLUDING TEST BUMPS

    公开(公告)号:US20220148994A1

    公开(公告)日:2022-05-12

    申请号:US17584776

    申请日:2022-01-26

    Abstract: Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

    ELECTRONIC DEVICE AND METHOD FOR PREDICTING AND COMPENSATING FOR RESIDUAL IMAGE ON DISPLAY

    公开(公告)号:US20240112627A1

    公开(公告)日:2024-04-04

    申请号:US18532150

    申请日:2023-12-07

    Abstract: An electronic device and a method for predicting and compensating for a residual image on a display are provided. The electronic device includes a display comprising a plurality of first pixels and a plurality of second pixels, a memory, and a processor. The processor configured to generate an image to be displayed through the display, group the image into a first image corresponding to the first pixels, and a second image corresponding to the second pixels, generate a first burn-in map by analyzing the first image, generate a second burn-in map by analyzing the second image, store the first burn-in map in a first memory region of the memory, store the second burn-in map in a second memory region of the memory, and display, through the display, the image having a burn-in or a residual image compensated for using the first burn-in map and the second burn-in map.

    SEMICONDUCTOR PACKAGE
    7.
    发明申请

    公开(公告)号:US20230005835A1

    公开(公告)日:2023-01-05

    申请号:US17851129

    申请日:2022-06-28

    Abstract: A semiconductor package includes a base chip including a passivation layer on an upper surface thereof, a semiconductor chip on the base chip, a bump on a lower surface of the semiconductor chip, an underfill layer covering the bump and covering the lower surface of the semiconductor chip, an encapsulant covering the semiconductor chip on the base chip, and an organic material layer on the passivation layer, wherein the base chip includes silicon (Si), the passivation layer has a first region in contact with the underfill layer and a second region, surrounding the first region, and the organic material layer is on the second region.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210183821A1

    公开(公告)日:2021-06-17

    申请号:US17183786

    申请日:2021-02-24

    Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

    SEMICONDUCTOR PACKAGE INCLUDING TEST BUMPS

    公开(公告)号:US20210175134A1

    公开(公告)日:2021-06-10

    申请号:US17010059

    申请日:2020-09-02

    Abstract: Disclosed is a semiconductor package comprising a first semiconductor chip and at least one second semiconductor chip on the first semiconductor chip. The second semiconductor chip includes first and second test bumps that are adjacent to an edge of the second semiconductor chip and are on a bottom surface of the second semiconductor chip. The first and second test bumps are adjacent to each other. The second semiconductor chip also includes a plurality of data bumps that are adjacent to a center of the second semiconductor chip and are on the bottom surface of the second semiconductor chip. A first interval between the second test bump and one of the data bumps is greater than a second interval between the first test bump and the second test bump. The one of the data bumps is most adjacent to the second test bump.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190229091A1

    公开(公告)日:2019-07-25

    申请号:US16225074

    申请日:2018-12-19

    Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.

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