-
公开(公告)号：US20190035635A1
公开(公告)日：2019-01-31
申请号：US16036113
申请日：2018-07-16
发明人： Sangwon KIM , Changsik SONG , Dongcheol JEONG , Minsu SEOL , Hyeonjin SHIN , Dongwook LEE , Taewoo KIM , Juhyen LEE , Hyejin CHO
IPC分类号： H01L21/308 , G03F7/004 , H01L21/311 , G03F7/16 , H01L29/16 , G03F7/027 , C07B37/12
摘要： Provided are a hardmask composition, a method of forming a pattern using the hardmask composition, and a hardmask formed using the hardmask composition. The hardmask composition includes a polar nonaqueous organic solvent and one of: i) a mixture of graphene quantum dots and at least one selected from a diene and a dienophile, ii) a Diels-Alder reaction product of the graphene quantum dots and the at least one selected from a diene and a dienophile, iii) a thermal treatment product of the Diels-Alder reaction product of graphene quantum dots and the at least one selected from a diene and a dienophile, or iv) a combination thereof.
-
公开(公告)号：US20220254643A1
公开(公告)日：2022-08-11
申请号：US17547626
申请日：2021-12-10
发明人： Kyung-Eun BYUN , Sangwoo KIM , Minsu SEOL , Hyeonjin SHIN , Minseok SHIN , Pin ZHAO , Taehyeong KIM , Jaehwan JUNG
IPC分类号： H01L21/308 , H01J37/34
摘要： A method of forming a material film includes providing a non-photosensitive mask on a substrate to expose a partial region of the substrate, forming a material film on the partial region of the substrate using a sputtering process, removing the non-photosensitive mask, and heat-treating the substrate and the material film from which the non-photosensitive mask is removed under a first gas atmosphere. The material film includes a transition metal and a chalcogen element. The sputtering process may include an RF magnetron sputtering process. The heat treatment may be performed at a higher temperature than a temperature of the forming the material film.
-
3.发明申请公开(公告)号：US20210300845A1
公开(公告)日：2021-09-30
申请号：US17211174
申请日：2021-03-24
发明人： Sangwon KIM , Changsik SONG , Juhyen LEE , Hyejin CHO , Hyeonjin SHIN , Minsu SEOL , Dongwook LEE
摘要： Provided are a functionalized polycyclic aromatic hydrocarbon compound and a light-emitting device including the same. The functionalized polycyclic aromatic hydrocarbon compound is structurally stable, and exhibits high light-emission characteristics since aggregation caused by π-π stacking is inhibited, and thus may have high efficiency and long lifespan characteristics.
-
4.发明公开公开(公告)号：US20230275128A1
公开(公告)日：2023-08-31
申请号：US18154978
申请日：2023-01-16
发明人： Junyoung KWON , Sangwoo KIM , Kyung-Eun BYUN , Minsu SEOL , Minseok SHIN , Pin ZHAO , Taehyeong KIM , Jaehwan JUNG
CPC分类号： H01L29/18 , H01L29/66969
摘要： A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.
-
5.发明公开公开(公告)号：US20240297221A1
公开(公告)日：2024-09-05
申请号：US18405389
申请日：2024-01-05
发明人： Changseok LEE , Seunghyun LEE , Minsu SEOL , Dohee KIM , Junseong BAE , Hyeyoon RYU , Sangwon KIM , Kyung-Eun BYUN
IPC分类号： H01L29/16 , H01L29/167 , H01L29/417 , H01L29/778
CPC分类号： H01L29/1606 , H01L29/167 , H01L29/41725 , H01L29/778
摘要： A transistor structure may include a semiconductor structure may include a substrate; a source electrode and a drain electrode spaced apart from each other on the substrate; a channel layer connected to the source electrode and the drain electrode; a gate insulating layer on the channel layer; and a gate electrode on the gate insulating layer. The channel layer may include a two-dimensional semiconductor material. The source electrode and the drain electrode each may include a graphene layer and a metal layer. The graphene layer may be formed by as-growing on the substrate. The graphene layer and the metal layer may be side by side in a vertical direction with respect to a surface of the substrate.
-
公开(公告)号：US20240222432A1
公开(公告)日：2024-07-04
申请号：US18401855
申请日：2024-01-02
发明人： Joungeun YOO , Duseop YOON , Kyung-Eun BYUN , Minsu SEOL
IPC分类号： H01L29/06 , H01L29/417 , H01L29/786
CPC分类号： H01L29/0673 , H01L29/41725 , H01L29/78696
摘要： A semiconductor device may include a two-dimensional (2D) material layer having semiconductor characteristics, and a source electrode, a drain electrode, and a gate electrode spaced apart from one another on the 2D material layer. At least one of the source electrode and the drain electrode may be in contact with the 2D material layer and may include an alloy layer that may be amorphous.
-
7.发明公开公开(公告)号：US20240021679A1
公开(公告)日：2024-01-18
申请号：US18350433
申请日：2023-07-11
发明人： Minsu SEOL , Junyoung KWON , Keunwook SHIN , Minseok YOO
IPC分类号： H01L29/24 , H01L29/66 , H01L29/786 , H01L29/78 , H01L29/775
CPC分类号： H01L29/24 , H01L29/66969 , H01L29/78696 , H01L29/7853 , H01L29/775 , H01L29/04
摘要： A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.
-
公开(公告)号：US20230036321A1
公开(公告)日：2023-02-02
申请号：US17831950
申请日：2022-06-03
发明人： Minsu SEOL , Junyoung KWON , Minseok YOO
IPC分类号： H01L29/10 , H01L29/78 , H01L29/417 , H01L21/8238
摘要： Provided are a layer structure including a configuration capable of increasing the operation characteristics of a device including the layer structure, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure includes a first layer and a second layer on one surface of the first layer and facing the first layer. The first layer and the second layer overlap each other. One layer of the first layer and the second layer has a trace of applied strain, and an other layer of the first layer and the second layer is a strain-inducing layer that applies a strain to the one layer.
-
公开(公告)号：US20220399228A1
公开(公告)日：2022-12-15
申请号：US17545468
申请日：2021-12-08
发明人： Keunwook SHIN , Minsu SEOL , Sangwon KIM , Kyung-Eun BYUN , Hyeonjin SHIN
IPC分类号： H01L21/768 , H01L23/532
摘要： Disclosed are an interconnect structure, an electronic device including the same, and a method of manufacturing the interconnect structure. The interconnect structure includes a dielectric layer; a conductive interconnect on the dielectric layer; and a graphene cap layer on the conductive interconnect. The graphene cap layer contains graphene quantum dots, has a carbon content of 80 at % or more, and has an oxygen content of 15 at % or less.
-
公开(公告)号：US20210226010A1
公开(公告)日：2021-07-22
申请号：US17111965
申请日：2020-12-04
发明人： Minhyun LEE , Minsu SEOL , Hyeonjin SHIN
IPC分类号： H01L29/10 , H01L29/36 , H01L29/423
摘要： A transistor including at least one two-dimensional (2D) channel is disclosed. A transistor according to some example embodiments includes first to third electrodes separated from each other, and a channel layer that is in contact with the first and second electrodes, parallel to the third electrode, and includes at least one 2D channel. The at least one 2D channel includes at least two regions having different doping concentrations. A transistor according to some example embodiments includes: first to third electrodes separated from each other; a 2D channel layer that is in contact with the first and second electrodes and parallel to the third electrode; a first doping layer disposed under the 2D channel layer corresponding to the first electrode; and a second doping layer disposed under the 2D channel layer corresponding to the second electrode, wherein the first and second doping layers contact the 2D channel layer.
-
-
-
-
-
-
-
-
-
搜索结果
61 条记录 (耗时 0.028 秒)
