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    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    1.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250079238A1

    公开(公告)日：2025-03-06

    申请号：US18762397

    申请日：2024-07-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Uihyoung LEE ,  Sang Ho JIN ,  Jongguk PARK ,  Yujin KIM ,  Hakyung YUN ,  Wonhee LEE

    IPC: H01L21/768 ,  H01L21/02

    Abstract: A method of fabricating a semiconductor device is provided. The method includes: providing an interlayer dielectric layer with a trench on a substrate in a first substrate processing apparatus in a vacuum state; forming a first metal barrier in the trench while the substrate is in the first substrate processing apparatus; unloading the substrate from the first substrate processing apparatus and exposing the substrate to a non-vacuum environment; providing the substrate in a second substrate processing apparatus of a vacuum state; forming a second metal barrier in the trench in the second substrate processing apparatus; and forming a metal pattern to fill the trench.

    FLOW CONTROL METHOD USING PLASMA SYSTEM
    2.
    发明公开
    FLOW CONTROL METHOD USING PLASMA SYSTEM 审中-公开

    公开(公告)号：US20240026539A1

    公开(公告)日：2024-01-25

    申请号：US18197919

    申请日：2023-05-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Suncheul Kim ,  Donghyun LEE ,  Uihyoung LEE ,  Donghoon Han

    IPC: C23C16/52 ,  C23C16/505 ,  C23C16/448

    CPC classification number: C23C16/52 ,  C23C16/505 ,  C23C16/4486

    Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

    APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE
    3.
    发明申请
    APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE 有权
    装置和处理基板的方法

    公开(公告)号：US20150325490A1

    公开(公告)日：2015-11-12

    申请号：US14709775

    申请日：2015-05-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Uihyoung LEE ,  Donghyun LEE ,  Jinhyoung KIM ,  Jaihyung WON ,  Sanghyun LEE ,  Jinho CHOI

    IPC: H01L21/66 ,  H01L21/288 ,  H01L21/306 ,  H01L21/67

    CPC classification number: H01L21/306 ,  C25D17/001 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/76898 ,  H01L22/26

    Abstract: Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

    Abstract translation: 提供了一种处理衬底的装置和方法。 基板处理装置包括：基板处理单元，其使用包含第一和第二源的混合物的处理溶液来处理基板; 源提供部件，用于将第一和第二源提供给基板处理单元; 至少一个分析器，用于测量处理溶液中第二源的浓度或处理溶液的pH值，并使用标准溶液调整处理溶液中第二源的测量参考值，其中第一和第二源 混合以具有预定浓度或pH值; 以及标准溶液供​​应部分，以使用从源供应部分供应的第一和第二源来准备标准溶液，并将标准溶液提供给至少一个分析器。

    METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220415902A1

    公开(公告)日：2022-12-29

    申请号：US17568117

    申请日：2022-01-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Suncheul KIM ,  Donghyun LEE ,  Uihyoung LEE

    IPC: H01L27/108

    Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

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