公开(公告)号：US20190305049A1

公开(公告)日：2019-10-03

申请号：US16105259

申请日：2018-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungbae PARK ,  Wenxu XIANYU ,  Bonwon KOO ,  Takkyun RO ,  Changseung LEE

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/146

Abstract: Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.

公开(公告)号：US20160240580A1

公开(公告)日：2016-08-18

申请号：US15002755

申请日：2016-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wenxu XIANYU ,  YOUNGYOUNG PARK ,  WOOYOUNG YANG ,  JEONGYUB LEE

IPC: H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/1446 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14627 ,  H01L27/14692 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/035227

Abstract: A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.

Abstract translation: 提供了光检测装置，制造光电检测装置的方法，图像传感器以及图像传感器的制造方法。 光检测装置包括第一绝缘层，设置在第一绝缘层上的硅层，穿过第一绝缘层和硅层设置的金属插塞，设置在硅层上的硅线，以及连接到硅线的电极 。

公开(公告)号：US20150179814A1

公开(公告)日：2015-06-25

申请号：US14642326

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wenxu XIANYU ,  Chang-youl MOON ,  Jeong-yub LEE ,  Chang-seung LEE

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract translation: 石墨烯装置可以分别包括在沟道层的第一区域和第二区域上的包括石墨烯，第一电极和第二电极的沟道层，以及覆盖沟道层和第一和第二电极的覆盖层。 第一和第二电极之间的沟道层的区域被覆盖层中的开口暴露。 栅极绝缘层可以在覆盖层上以覆盖沟道层的区域，并且栅极可以在栅极绝缘层上。

公开(公告)号：US20190326555A1

公开(公告)日：2019-10-24

申请号：US16268805

申请日：2019-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyoung YANG ,  Wenxu XIANYU ,  Yongsung KIM ,  Changseung LEE

IPC: H01L51/52 ,  H01L51/10 ,  C23C16/50 ,  C23C16/455

Abstract: Provided are a flexible organic-inorganic passivation film and a method of forming the same. The flexible organic-inorganic passivation film includes an organic-inorganic passivation film formed by alternately and repeatedly forming an organic film and an inorganic film on a substrate. The organic film is formed by stacking plasma-process generated material on a material layer thereunder. The plasma-process generated material is formed by plasma processing a hydrocarbon or a fluorocarbon.