公开(公告)号：US20230354725A1

公开(公告)日：2023-11-02

申请号：US18349433

申请日：2023-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Dongho AHN ,  Changseung LEE

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10N70/8828 ,  H10B63/24 ,  H10B63/84 ,  H10N70/066 ,  H10N70/231 ,  H10N70/8413

Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

公开(公告)号：US20230091136A1

公开(公告)日：2023-03-23

申请号：US17835508

申请日：2022-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Segab KWON ,  Hajun SUNG ,  Dongho AHN ,  Changseung LEE

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a chalcogenide-based material, and a switching element and a memory device that include the same. The chalcogenide-based material includes: a chalcogenide material and a dopant. The chalcogenide material includes Ge, Sb, and Se. The dopant includes at least one metal or metalloid element selected from In, Al, Sr, and Si, an oxide of the metal or metalloid element, or a nitride of the metal or metalloid element.

公开(公告)号：US20220173316A1

公开(公告)日：2022-06-02

申请号：US17330950

申请日：2021-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Dongho AHN ,  Changseung LEE

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided is a semiconductor apparatus including a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.

公开(公告)号：US20170064839A1

公开(公告)日：2017-03-02

申请号：US15065488

申请日：2016-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongyub LEE ,  Yunsung Woo ,  Changseung LEE ,  Eunhyoung CHO

IPC: H05K3/02 ,  B23K26/384 ,  B23K26/0622 ,  H05K3/18

CPC classification number: B23K26/0622 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0853 ,  B23K26/0869 ,  B23K26/384 ,  B23K26/386 ,  B23K26/389 ,  H01L31/1884 ,  H05K3/0047 ,  H05K3/146 ,  H05K2201/0108 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0323 ,  H05K2201/10128 ,  H05K2203/107

Abstract: A method of patterning holes includes placing a substrate on a stage of a laser system, the substrate having a graphene layer on a surface thereof, generating a pulse laser from the laser system, and forming a plurality of hole patterns spaced apart from each other on the graphene layer by irradiating the pulse laser while the graphene layer is in motion.

Abstract translation: 图案化孔的方法包括将基板放置在激光系统的台上，所述基板在其表面上具有石墨烯层，从激光系统产生脉冲激光，并且形成多个彼此间隔开的孔图案 石墨烯层通过在石墨烯层运动时照射脉冲激光器。

公开(公告)号：US20160133349A1

公开(公告)日：2016-05-12

申请号：US14808360

申请日：2015-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhyoung CHO ,  Inyong SONG ,  Changseung LEE ,  Chan KWAK ,  Jaekwan KIM ,  Jooho LEE ,  Jinyoung HWANG

IPC: H01B1/22 ,  D06M23/00 ,  C23F1/32 ,  D06M15/564

CPC classification number: H01B1/22 ,  B82Y10/00 ,  B82Y40/00 ,  C23F1/02 ,  C23F1/14 ,  C23F1/30 ,  C23F1/40 ,  G06F3/041 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04112 ,  H01L29/0673 ,  H01L29/413 ,  H01L31/022466 ,  H01L33/42

Abstract: Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.

Abstract translation: 示例实施方案涉及包括导电区域和非导电区域的纳米结构，其中所述导电区域包括至少一个第一纳米线，并且所述非导电区域包括至少部分切割的至少一个第二纳米线，制备纳米结构的方法， 以及包括纳米结构的面板单元。

公开(公告)号：US20220149114A1

公开(公告)日：2022-05-12

申请号：US17362075

申请日：2021-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Bonwon KOO ,  Segab KWON ,  Chungman KIM ,  Yongyoung PARK ,  Dongho AHN ,  Seunggeun YU ,  Changseung LEE

IPC: H01L27/24 ,  H01L45/00 ,  H01L29/24

Abstract: Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).

公开(公告)号：US20210159072A1

公开(公告)日：2021-05-27

申请号：US16697774

申请日：2019-11-27

Applicant: Samsung Electronics Co., Ltd. ,  Cornell University

Inventor： Kiyoung LEE ,  Woojin LEE ,  Myoungho JEONG ,  Yongsung KIM ,  Eunsun KIM ,  Hyosik MUN ,  Jooho LEE ,  Changseung LEE ,  Kyuho CHO ,  Darrell G. SCHLOM ,  Craig J. FENNIE ,  Natalie M. DAWLEY ,  Gerhard H. OLSEN ,  Zhe WANG

IPC: H01L21/02 ,  H01L49/02

Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

公开(公告)号：US20200257142A1

公开(公告)日：2020-08-13

申请号：US16857756

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Kiyeon YANG ,  Youngsun CHOI ,  Seokho SONG ,  Jaewoong YOON ,  Choloong HAN ,  Yongsung KIM ,  Jeongyub LEE ,  Changseung LEE

IPC: G02F1/09 ,  G02B6/12 ,  G02B6/293 ,  G02F1/31 ,  G02F1/095 ,  G02B6/42 ,  G02B6/27

Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.

公开(公告)号：US20180224574A1

公开(公告)日：2018-08-09

申请号：US15805864

申请日：2017-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongyub LEE ,  Changseung LEE ,  Yongsung KIM ,  Jaekwan KIM ,  Byonggwon SONG ,  Sanghoon SONG ,  Kiyeon YANG

IPC: G02B1/00 ,  G02B1/02 ,  C23C14/34 ,  C23C14/58 ,  C23C14/06

CPC classification number: G02B1/002 ,  C23C14/0617 ,  C23C14/34 ,  C23C14/5806 ,  C23C16/401 ,  C23C16/50 ,  G02B1/02 ,  G02B3/00

Abstract: A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.

公开(公告)号：US20180190909A1

公开(公告)日：2018-07-05

申请号：US15635990

申请日：2017-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yongyoung PARK ,  Kideok BAE ,  Wooyoung YANG ,  Changseung LEE

IPC: H01L51/00 ,  H01L21/66 ,  H01L21/67 ,  H01L51/44

CPC classification number: H01L22/12 ,  G01M11/0228 ,  G01N3/068 ,  G01N3/08 ,  G01N2203/0278 ,  G01N2203/0282 ,  G01N2203/0641 ,  H01L21/67288 ,  H01L22/20 ,  H01L22/24 ,  H01L22/26 ,  H01L51/0031 ,  H01L51/0096 ,  H01L51/5253 ,  Y02E10/549

Abstract: A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.