公开(公告)号：US20140242782A1

公开(公告)日：2014-08-28

申请号：US14077956

申请日：2013-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-hyoung CHO ,  Jun-Hee CHOI ,  Jin-seung SOHN ,  Chang-youl MOON

IPC: H01L21/78 ,  H01L21/82 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/7806 ,  H01L21/02343 ,  H01L21/28 ,  H01L21/82 ,  H01L23/3192 ,  H01L27/153 ,  H01L31/035281 ,  H01L31/03926 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016 ,  H01S5/0217 ,  H01S5/32341 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract translation: 本公开涉及将半导体元件从非柔性基板转移到柔性基板的方法。 本公开还涉及一种基于传送半导体元件的方法制造柔性半导体器件的方法。 在非柔性基板上生长或形成的半导体元件可以有效地转移到树脂层，同时保持半导体元件的布置。 树脂层可以用作用于支撑垂直半导体元件的柔性基板。

公开(公告)号：US20150179814A1

公开(公告)日：2015-06-25

申请号：US14642326

申请日：2015-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wenxu XIANYU ,  Chang-youl MOON ,  Jeong-yub LEE ,  Chang-seung LEE

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/78684 ,  H01L27/1266 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66742 ,  H01L29/78603

Abstract: A graphene device may include a channel layer including graphene, a first electrode and second electrode on a first region and second region of the channel layer, respectively, and a capping layer covering the channel layer and the first and second electrodes. A region of the channel layer between the first and second electrodes is exposed by an opening in the capping layer. A gate insulating layer may be on the capping layer to cover the region of the channel layer, and a gate may be on the gate insulating layer.

Abstract translation: 石墨烯装置可以分别包括在沟道层的第一区域和第二区域上的包括石墨烯，第一电极和第二电极的沟道层，以及覆盖沟道层和第一和第二电极的覆盖层。 第一和第二电极之间的沟道层的区域被覆盖层中的开口暴露。 栅极绝缘层可以在覆盖层上以覆盖沟道层的区域，并且栅极可以在栅极绝缘层上。

公开(公告)号：US20150144918A1

公开(公告)日：2015-05-28

申请号：US14549800

申请日：2014-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-hyoung CHO ,  Woong KO ,  Jae-kwan KIM ,  Chang-youl MOON ,  Hong-shik SHIM ,  In-kyeong YOO ,  Chul-ho JEONG

IPC: H01L51/56 ,  H01L51/52 ,  H01L27/32 ,  B29D11/00 ,  B29C33/38

CPC classification number: H01L51/5275 ,  B29C33/3885 ,  B29D11/00365 ,  B29D11/00788 ,  B29K2029/04 ,  B29K2905/00 ,  B29K2907/00

Abstract: An optical film manufacturing method includes forming a master in which a shape corresponding to a plurality of micro-lens patterns is engraved, forming a low refractive index pattern layer in which the plurality of micro-lens patterns are formed, by using the master, forming a high refractive index material layer that has a higher refractive index than a refractive index of the low refractive index pattern layer, and imprinting the low refractive index pattern layer on the high refractive index material layer to form a high refractive index pattern layer, on a first surface of a substrate.

Abstract translation: 一种光学薄膜的制造方法，其特征在于，具备形成与多个微透镜图案对应的形状被雕刻的主体，通过使用所述主体形成形成有多个微透镜图案的低折射率图案层，形成 具有比所述低折射率图案层的折射率更高的折射率的高折射率材料层，以及在所述高折射率材料层上压印所述低折射率图案层以形成高折射率图案层， 衬底的第一表面。

公开(公告)号：US20140299231A1

公开(公告)日：2014-10-09

申请号：US14077846

申请日：2013-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kun-mo CHU ,  Chang-youl MOON ,  Sung-hee LEE ,  Jun-sik HWANG

IPC: B23K35/02

CPC classification number: B23K35/0222 ,  B23K35/0244

Abstract: A solder composite is provided. The solder composite may include: a metal-based solder matrix, a capsule dispersed in the solder matrix, and a self-healing material that is encapsulated in the capsule. The self-healing material may be configured to react with the solder matrix when in contact with the solder matrix such that at least one of an electrically conductive intermetallic compound and an electrically conductive alloy is formed.

Abstract translation: 提供焊料复合材料。 焊料复合材料可以包括：金属基焊料基质，分散在焊料基质中的胶囊，以及封装在胶囊中的自修复材料。 自修复材料可以被配置为当与焊料基质接触时与焊料基质反应，使得形成导电金属间化合物和导电合金中的至少一种。

公开(公告)号：US20140335681A1

公开(公告)日：2014-11-13

申请号：US14268053

申请日：2014-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo-ho LEE ,  Yong-sung KIM ,  Chang-youl MOON ,  Sung-hee LEE ,  Chang-seung LEE

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/0262 ,  H01L21/2007 ,  H01L29/1606 ,  H01L29/66015

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract translation: 石墨烯转移方法，使用其的器件制造方法和包括石墨烯的衬底结构包括在第一衬底上形成催化剂层，在催化剂层上形成石墨烯层，在石墨烯层上形成保护金属层， 将保护金属层，石墨烯层和催化剂层保留在支撑体上，从支撑体除去催化剂层，将保护金属层和保护金属层转移到保护金属层， 石墨烯层从支撑体到第二基底。

公开(公告)号：US20140030857A1

公开(公告)日：2014-01-30

申请号：US13790534

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joo-ho LEE ,  Yong-seok JUNG ,  Yong-sung KIM ,  Chang-seung LEE ,  Chang-youl MOON

IPC: H01L29/66 ,  C25D17/00

CPC classification number: H01L29/66045 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/186 ,  C25B1/00 ,  C25B9/00 ,  C25D17/00 ,  C25F5/00 ,  C25F7/00

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract translation: 石墨烯装置制造装置包括电极，在基板上形成有金属催化剂层的石墨烯结构，保护层和保护层与金属催化剂层之间的石墨烯层，功率单元，被配置为在保护层和金属催化剂层之间施加电压 电极和金属催化剂层，以及其中石墨烯结构至少部分浸没的电解质。

公开(公告)号：US20140174640A1

公开(公告)日：2014-06-26

申请号：US13918066

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Jeong-yub LEE ,  Chang-youl MOON ,  Yong-young PARK ,  Woo-young YANG ,  Yong-sung KIM ,  Joo-ho LEE

IPC: B29C67/24

CPC classification number: B29C67/24 ,  H01L51/0023 ,  H01L51/0045 ,  H01L51/102 ,  H01L51/442 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract translation: 转移石墨烯的方法包括在第一基板上顺序地形成牺牲层和石墨烯层，将石墨烯层粘合到目标层，以及使用激光去除牺牲层并将第一基板与石墨烯层分离。

公开(公告)号：US20140162053A1

公开(公告)日：2014-06-12

申请号：US13866389

申请日：2013-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-yub LEE ,  Xianyu WENXU ,  Jun-sik HWANG ,  Chang-youl MOON

IPC: B32B7/12 ,  B32B37/12 ,  B32B38/00

CPC classification number: B32B7/12 ,  B32B7/10 ,  B32B15/08 ,  B32B15/20 ,  B32B27/08 ,  B32B27/281 ,  B32B27/283 ,  B32B27/302 ,  B32B27/32 ,  B32B37/12 ,  B32B38/0008 ,  B32B38/162 ,  B32B2250/40 ,  B32B2457/14 ,  H01L21/187 ,  H01L21/306 ,  Y10T428/265 ,  Y10T428/31663

Abstract: A bonded substrate structure includes a siloxane-based monomer layer between a first substrate and a second substrate, the siloxane-based monomer layer bonding the first substrate and the second substrate. The first substrate and the second substrate may be one of a silicon substrate and a silicon oxide substrate, respectively.

Abstract translation: 键合衬底结构包括在第一衬底和第二衬底之间的硅氧烷基单体层，所述硅氧烷基单体层接合第一衬底和第二衬底。 第一基板和第二基板可以分别是硅基板和氧化硅基板之一。

公开(公告)号：US20140117349A1

公开(公告)日：2014-05-01

申请号：US13949588

申请日：2013-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xianyu WENXU ,  Woo-young YANG ,  Chang-youl MOON ,  Yong-young PARK ,  Jeong-yub LEE

IPC: H01L21/02 ,  H01L29/04

CPC classification number: H01L29/78603 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02672 ,  H01L29/04 ,  H01L29/045 ,  H01L29/16 ,  H01L29/161 ,  H01L29/45 ,  H01L29/458 ,  H01L29/66136 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78684 ,  H01L29/868

Abstract: A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor layer on the metal oxide layer, and forming a polycrystalline semiconductor layer by crystallizing the amorphous semiconductor layer using the metal oxide layer.

Abstract translation: 使用金属氧化物的半导体器件的制造方法包括在基板上形成金属氧化物层，在金属氧化物层上形成非晶半导体层，通过使用金属氧化物层使非晶半导体层结晶而形成多晶半导体层。

公开(公告)号：US20140110717A1

公开(公告)日：2014-04-24

申请号：US13848281

申请日：2013-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xianyu WENXU ,  Yeon-hee KIM ,  Chang-youl MOON ,  Yong-young PARK

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/2003

Abstract: A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

Abstract translation: 一种结构包括硅衬底，硅衬底上的多个硅棒，多个硅棒上的硅层，以及硅层上的GaN衬底。