公开(公告)号：US09177865B2

公开(公告)日：2015-11-03

申请号：US14271909

申请日：2014-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Hee Kim ,  Nae-In Lee ,  Kug-Hwan Kim ,  Jong-Ho Lee

IPC: H01L27/11 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/82345 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/823842 ,  H01L27/1104 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Provided are methods for fabricating a semiconductor device. A gate dielectric layer is formed on a substrate including first through third regions. A first functional layer is formed on only the first region of the first through third regions. A second functional layer is formed on only the first and second regions of the first through third regions. A threshold voltage adjustment layer is formed on the first through third regions. The threshold voltage adjustment layer includes a work function adjustment material. The work function adjustment material is diffused into the gate dielectric layer by performing a heat treatment process with respect to the substrate.

Abstract translation: 提供了制造半导体器件的方法。 在包括第一至第三区域的衬底上形成栅极电介质层。 仅在第一至第三区域的第一区域上形成第一功能层。 仅在第一至第三区域的第一和第二区域上形成第二功能层。 在第一至第三区域上形成阈值电压调节层。 阈值电压调整层包括功函调整材料。 通过对基板进行热处理工艺，将功函调整材料扩散到栅介质层。

公开(公告)号：US09640443B2

公开(公告)日：2017-05-02

申请号：US15154032

申请日：2016-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kug-Hwan Kim ,  Jong-Ho Lee ,  Woo-Hee Kim ,  Nae-In Lee

IPC: H01L21/321 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L27/092 ,  H01L27/11 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L21/28202 ,  H01L21/823821 ,  H01L27/088 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/42364 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66545

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including first through fourth areas. Moreover, first through fourth gate insulating layers are on the first through fourth areas, respectively. Amounts of work function control materials in the first through fourth gate insulating layers, nitrogen concentrations in the first through fourth gate insulating layers, and/or thicknesses of the first through fourth gate insulating layers vary among the first through fourth gate insulating layers. Methods for fabricating semiconductor devices are also provided.

公开(公告)号：US20160276225A1

公开(公告)日：2016-09-22

申请号：US15154032

申请日：2016-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kug-Hwan Kim ,  Jong-Ho Lee ,  Woo-Hee Kim ,  Nae-In Lee

IPC: H01L21/8238 ,  H01L27/11 ,  H01L29/66 ,  H01L27/092 ,  H01L29/49

CPC classification number: H01L21/823842 ,  H01L21/28202 ,  H01L21/823821 ,  H01L27/088 ,  H01L27/0922 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/42364 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66545

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including first through fourth areas. Moreover, first through fourth gate insulating layers are on the first through fourth areas, respectively. Amounts of work function control materials in the first through fourth gate insulating layers, nitrogen concentrations in the first through fourth gate insulating layers, and/or thicknesses of the first through fourth gate insulating layers vary among the first through fourth gate insulating layers. Methods for fabricating semiconductor devices are also provided.

公开(公告)号：US20140363960A1

公开(公告)日：2014-12-11

申请号：US14271909

申请日：2014-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Hee Kim ,  Nae-In Lee ,  Kug-Hwan Kim ,  Jong-Ho Lee

IPC: H01L21/28

CPC classification number: H01L21/82345 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/823842 ,  H01L27/1104 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: Provided are methods for fabricating a semiconductor device. A gate dielectric layer is formed on a substrate including first through third regions. A first functional layer is formed on only the first region of the first through third regions. A second functional layer is formed on only the first and second regions of the first through third regions. A threshold voltage adjustment layer is formed on the first through third regions. The threshold voltage adjustment layer includes a work function adjustment material. The work function adjustment material is diffused into the gate dielectric layer by performing a heat treatment process with respect to the substrate.

Abstract translation: 提供了制造半导体器件的方法。 在包括第一至第三区域的衬底上形成栅极电介质层。 仅在第一至第三区域的第一区域上形成第一功能层。 仅在第一至第三区域的第一和第二区域上形成第二功能层。 在第一至第三区域上形成阈值电压调节层。 阈值电压调整层包括功函调整材料。 通过对基板进行热处理工艺，将功函调整材料扩散到栅介质层。