公开(公告)号：US12113110B2

公开(公告)日：2024-10-08

申请号：US17541735

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woochul Jeon ,  Jongseob Kim ,  Jaejoon Oh ,  Younghwan Park

IPC: H01L29/423 ,  H01L27/098 ,  H01L29/20 ,  H01L29/808

CPC classification number: H01L29/42316 ,  H01L27/098 ,  H01L29/808 ,  H01L29/2003

Abstract: A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.

公开(公告)号：US12199174B2

公开(公告)日：2025-01-14

申请号：US17537989

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhyuk Park ,  Sunkyu Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Woochul Jeon

IPC: H01L29/778 ,  H01L21/02 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: The present disclosure provides a high electron mobility transistor including a channel layer; a barrier layer on the channel layer and configured to induce formation of a 2-dimensional electron gas (2DEG) to the channel layer; a p-type semiconductor layer on the barrier layer; a first passivation layer on the barrier layer and including a quaternary material of Al, Ga, O, and N; a gate electrode on the p-type semiconductor layer; and a source electrode and a drain electrode provided on both sides of the barrier layer and separated from the gate electrode.