公开(公告)号：US12262126B2

公开(公告)日：2025-03-25

申请号：US18218902

申请日：2023-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junseok Kim ,  Raeyoung Kim ,  Keunjoo Park ,  Jaeha Park ,  Junhyuk Park ,  Jiwon Im

IPC: H04N25/47 ,  H04N23/45 ,  H04N25/707 ,  H04N25/766 ,  H04N25/77 ,  H04N25/79

Abstract: A pixel of a vision sensor includes a photoelectric converter configured to convert an optical signal into a current, a current-to-voltage converter configured to convert the current into a first voltage, an amplifier configured to generate an output voltage by amplifying a voltage level of the first voltage, at least one comparator configured to identify whether an event occurs based on comparing the output voltage with at least one threshold voltage, and generate an event signal based on identifying that the event occurs, and at least one counter configured to receive the event signal from the at least one comparator, obtain a count value by counting the event signal as information about an amount of change in illumination, and transmit output data comprising the count value.

公开(公告)号：US20220172375A1

公开(公告)日：2022-06-02

申请号：US17515755

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongseok SEO ,  Junhyuk Park ,  Hyunku Lee

IPC: G06T7/215 ,  H04N5/3745 ,  H04N5/345

Abstract: Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.

公开(公告)号：US11888059B2

公开(公告)日：2024-01-30

申请号：US17349327

申请日：2021-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US11069802B2

公开(公告)日：2021-07-20

申请号：US16703128

申请日：2019-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US20250169123A1

公开(公告)日：2025-05-22

申请号：US18745665

申请日：2024-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Seok Yang ,  Sanghyun Kim ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Jung-Wook Lee

IPC: H01L29/06 ,  H01L23/00 ,  H01L23/29 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a channel layer, a barrier layer on the channel layer including a material having a different energy band gap than a material included in the channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, a protection layer on the barrier layer and the gate electrode, a source electrode and a drain electrode on both sides of the gate electrode and extending through the protection layer to cover the side surfaces of the channel layer and the barrier layer, and a diffusion barrier layer within the protection layer covering the barrier layer and the gate electrode and including Nitrogen.

公开(公告)号：US20240273901A1

公开(公告)日：2024-08-15

申请号：US18375071

申请日：2023-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunjoo PARK ,  Junseok Kim ,  Junhyuk Park ,  Bongki Son

IPC: G06V20/40 ,  G06V10/60

CPC classification number: G06V20/44 ,  G06V10/60

Abstract: A vision sensor includes a memory; a pixel array including a plurality of pixels configured to generate an event signal by detecting an event in which an intensity of incident light changes; and an event detection circuit configured to read the event signal from the pixel array and configured to process the event signal, wherein the event detection circuit configured to: store, in the memory, a state map including a first state corresponding to a presence of an event of each of the plurality of pixels, and a second state corresponding to an absence of the event, and correct the event occurring in a selected pixel, based on the state map stored in the memory.

公开(公告)号：US20230217123A1

公开(公告)日：2023-07-06

申请号：US18120251

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongseok SEO ,  Junhyuk Park ,  Hyunku Lee

IPC: H04N25/47 ,  H04N23/80

CPC classification number: H04N25/47 ,  H04N23/80

Abstract: Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.

公开(公告)号：US11588046B2

公开(公告)日：2023-02-21

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul Shin ,  Boram Kim ,  Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Minchul Yu ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US12119397B2

公开(公告)日：2024-10-15

申请号：US17465212

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Jaejoon Oh ,  Injun Hwang

IPC: H01L29/00 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/66431

Abstract: A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.

公开(公告)号：US12058454B2

公开(公告)日：2024-08-06

申请号：US18120251

申请日：2023-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongseok Seo ,  Junhyuk Park ,  Hyunku Lee

IPC: H04N25/47 ,  G06T7/215 ,  H04N23/80 ,  H04N25/443 ,  H04N25/46

CPC classification number: H04N25/47 ,  G06T7/215 ,  H04N23/80 ,  H04N25/443 ,  H04N25/46 ,  G06T2207/20112

Abstract: Provided is a vision sensor including a pixel array including a plurality of pixels disposed in a matrix form, an event detection circuit configured to detect whether an event has occurred in the plurality of pixels and generate event signals corresponding to pixels from among the plurality of pixels in which an event has occurred, a map data processor configured to generate a timestamp map based on the event signals, and an interface circuit configured to transmit vision sensor data including at least one of the event signals and the timestamp map to an external processor, wherein the timestamp map includes timestamp information indicating polarity information, address information, and an event occurrence time of a pixel included in an event signal corresponding to the pixel.