公开(公告)号：US12113110B2

公开(公告)日：2024-10-08

申请号：US17541735

申请日：2021-12-03

申请人： Samsung Electronics Co., Ltd.

发明人： Woochul Jeon ,  Jongseob Kim ,  Jaejoon Oh ,  Younghwan Park

IPC分类号： H01L29/423 ,  H01L27/098 ,  H01L29/20 ,  H01L29/808

CPC分类号： H01L29/42316 ,  H01L27/098 ,  H01L29/808 ,  H01L29/2003

摘要： A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.

公开(公告)号：US20180351224A1

公开(公告)日：2018-12-06

申请号：US15877562

申请日：2018-01-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC分类号： H01M12/06 ,  H01M10/617 ,  H01M10/654

摘要： A metal-air battery apparatus includes a temperature controller for controlling temperatures of a positive electrode and a negative electrode. The temperature controller includes a monitoring unit that may be separated from the temperature controller. The temperature of at least one of the positive electrode and the negative electrode may be controlled by monitoring an internal condition of the metal-air battery apparatus.

公开(公告)号：US11588046B2

公开(公告)日：2023-02-21

申请号：US17386729

申请日：2021-07-28

申请人： Samsung Electronics Co., Ltd.

发明人： Dongchul Shin ,  Boram Kim ,  Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Minchul Yu ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US11335802B2

公开(公告)日：2022-05-17

申请号：US17016890

申请日：2020-09-10

申请人： Samsung Electronics Co., Ltd.

发明人： Jaejoon Oh ,  Jongseob Kim

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

摘要： Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.

公开(公告)号：US11888059B2

公开(公告)日：2024-01-30

申请号：US17349327

申请日：2021-06-16

申请人： Samsung Electronics Co., Ltd.

发明人： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC分类号： H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/40

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831

摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US20210351457A1

公开(公告)日：2021-11-11

申请号：US17029440

申请日：2020-09-23

申请人： Samsung Electronics Co., Ltd.

发明人： Jeongsik Ko ,  Hyukjae Kwon ,  Jaejoon Oh

IPC分类号： H01M10/6556 ,  H01M10/48 ,  H01M10/63

摘要： A metal-air battery apparatus includes an inlet module and a main module each having a metal-air battery cell structure including a positive electrode and a negative electrode. The inlet module and the main module are electrically controlled and independently controlled from each other, and a channel through which a fluid such as air flows is defined between the inlet module and the main module. A temperature of the inlet module and a temperature of the main module are independently controlled by adjusting a discharge current density or by charging or a temperature adjustor.

公开(公告)号：US11069802B2

公开(公告)日：2021-07-20

申请号：US16703128

申请日：2019-12-04

申请人： Samsung Electronics Co., Ltd.

发明人： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US11757029B2

公开(公告)日：2023-09-12

申请号：US17719690

申请日：2022-04-13

申请人： Samsung Electronics Co., Ltd.

发明人： Jaejoon Oh ,  Jongseob Kim

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/10 ,  H01L29/42312 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/2003 ,  H01L29/205

摘要： Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.

公开(公告)号：US11728419B2

公开(公告)日：2023-08-15

申请号：US17082478

申请日：2020-10-28

申请人： Samsung Electronics Co., Ltd.

发明人： Injun Hwang ,  Jaejoon Oh ,  Soogine Chong ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Sunkyu Hwang

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/40 ,  H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

摘要： A high electron mobility transistor (HEMT) includes a channel layer comprising a group III-V compound semiconductor; a barrier layer comprising the group III-V compound semiconductor on the channel layer; a gate electrode on the barrier layer; a source electrode over gate electrode; a drain electrode spaced apart from the source electrode; and a metal wiring layer. A same layer of the metal wiring layer includes a gate wiring connected to the gate electrode, a source field plate connected to the source electrode, and a drain field plate connected to the drain electrode.

公开(公告)号：US11581269B2

公开(公告)日：2023-02-14

申请号：US16868745

申请日：2020-05-07

申请人： Samsung Electronics Co., Ltd.

发明人： Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC分类号： H01L23/00 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

摘要： A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.