公开(公告)号：US11588046B2

公开(公告)日：2023-02-21

申请号：US17386729

申请日：2021-07-28

申请人： Samsung Electronics Co., Ltd.

发明人： Dongchul Shin ,  Boram Kim ,  Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Minchul Yu ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US11335802B2

公开(公告)日：2022-05-17

申请号：US17016890

申请日：2020-09-10

申请人： Samsung Electronics Co., Ltd.

发明人： Jaejoon Oh ,  Jongseob Kim

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205

摘要： Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.

公开(公告)号：US11888059B2

公开(公告)日：2024-01-30

申请号：US17349327

申请日：2021-06-16

申请人： Samsung Electronics Co., Ltd.

发明人： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC分类号： H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/40

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831

摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US11069802B2

公开(公告)日：2021-07-20

申请号：US16703128

申请日：2019-12-04

申请人： Samsung Electronics Co., Ltd.

发明人： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC分类号： H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

摘要： Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US12113110B2

公开(公告)日：2024-10-08

申请号：US17541735

申请日：2021-12-03

申请人： Samsung Electronics Co., Ltd.

发明人： Woochul Jeon ,  Jongseob Kim ,  Jaejoon Oh ,  Younghwan Park

IPC分类号： H01L29/423 ,  H01L27/098 ,  H01L29/20 ,  H01L29/808

CPC分类号： H01L29/42316 ,  H01L27/098 ,  H01L29/808 ,  H01L29/2003

摘要： A nitride semiconductor device having a field effect gate is disclosed. The disclosed nitride semiconductor device includes a high-resistance material layer including a Group III-V compound semiconductor, a first channel control layer on the high-resistance material layer and including a Group III-V compound semiconductor of a first conductivity type, a channel layer on the channel layer control layer and including a nitride semiconductor of a second conductivity type opposite to the first conductivity type, and a gate electrode having a contact of an ohmic contact type with the first channel control layer.

公开(公告)号：US11387358B2

公开(公告)日：2022-07-12

申请号：US15931969

申请日：2020-05-14

申请人： Samsung Electronics Co., Ltd.

发明人： Younghwan Park ,  Jongseob Kim

IPC分类号： H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/78

摘要： A semiconductor structure includes a substrate; at least one mask layer spaced apart from the substrate in a first direction; a first semiconductor region of a first conductivity type between the substrate and the at least one mask layer; a second semiconductor region of a second conductivity type on the at least one mask layer; and a third semiconductor region of the first conductivity type on the first semiconductor region. The third semiconductor region may contact the second semiconductor region to form a PN-junction structure in a second direction different from the first direction. The semiconductor structure may be applied to vertical power devices and may be capable of increasing withstand voltage performance and lowering an on-resistance.

公开(公告)号：US11227890B2

公开(公告)日：2022-01-18

申请号：US16885936

申请日：2020-05-28

申请人： Samsung Electronics Co., Ltd.

发明人： Younghwan Park ,  Jongseob Kim

IPC分类号： H01L27/15

摘要： A light-emitting device includes a first electrode layer; a second electrode layer; a third electrode layer separated from the first and second electrode layers; a multi-quantum well (MQW) layer between the first electrode layer and the second and third electrode layers; a first material layer between the first electrode layer and the MQW layer and doped with a first conductive type dopant; a second material layer between the second and third electrode layers and the MQW layer and doped with a second conductive type dopant; a gate insulating layer between the third electrode layer and the second material layer; and a current blocking layer configured to at least partially block a flow of a current between the second electrode layer and the MQW layer.

公开(公告)号：US12119397B2

公开(公告)日：2024-10-15

申请号：US17465212

申请日：2021-09-02

申请人： Samsung Electronics Co., Ltd.

发明人： Sunkyu Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Jaejoon Oh ,  Injun Hwang

IPC分类号： H01L29/00 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/66431

摘要： A semiconductor integrated circuit device includes: a channel layer, a barrier layer; a first p-type semiconductor layer and a second p-type semiconductor layer, spaced apart from each other on the barrier layer; and a passivation layer on the first p-type semiconductor layer and the second p-type semiconductor layer. The passivation layer may partially inactivate a dopant of at least one of the first p-type semiconductor layer and the second p-type semiconductor layer.

公开(公告)号：US12040391B2

公开(公告)日：2024-07-16

申请号：US17398407

申请日：2021-08-10

申请人： Samsung Electronics Co., Ltd.

发明人： Joonyong Kim ,  Sunkyu Hwang ,  Jongseob Kim ,  Junhyuk Park

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/407 ,  H01L29/66462

摘要： Provided are a power device and a method of manufacturing the same. The power device may include a channel layer; a source and a drain at respective sides of the channel layer; a gate on the channel layer between the source and the drain; a passivation layer covering the source, the drain, and the gate; and a plurality of field plates in the passivation layer. The plurality of field plates may have different thicknesses. The plurality of field plates may have different widths, different pattern shapes, or both different widths and different pattern shapes.

公开(公告)号：US12002879B2

公开(公告)日：2024-06-04

申请号：US17098896

申请日：2020-11-16

申请人： Samsung Electronics Co., Ltd.

发明人： Sunkyu Hwang ,  Joonyong Kim ,  Jongseob Kim ,  Junhyuk Park ,  Boram Kim ,  Younghwan Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Injun Hwang

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.