公开(公告)号：US20160284412A1

公开(公告)日：2016-09-29

申请号：US15174183

申请日：2016-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

公开(公告)号：US20160055914A1

公开(公告)日：2016-02-25

申请号：US14931936

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。

公开(公告)号：US20140293693A1

公开(公告)日：2014-10-02

申请号：US14197723

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。