公开(公告)号：US20240087658A1

公开(公告)日：2024-03-14

申请号：US18304773

申请日：2023-04-21

Applicant: Samsung Electronics Co., Ltd

Inventor： Kuihan KO ,  Sang-Won Park

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/16

CPC classification number: G11C16/3445 ,  G11C16/0433 ,  G11C16/16

Abstract: Disclosed is a storage device which includes a first word line connected with memory cells being in a program state, a second word line connected with memory cells being an erase state, and a free word line between the first and second word lines and connected with memory cells being the erase state. Whether a block continuous-write is possible with respect to the memory cells connected with the second word line is determined by verifying the erase state of the memory cells connected with the free word line during one busy signal period. According to the present disclosure, because whether a block continuous-write is possible is determined with respect to a plurality of free pages during one busy signal period, a time taken to perform the block continuous-write operation may decrease.

公开(公告)号：US20240428857A1

公开(公告)日：2024-12-26

申请号：US18819002

申请日：2024-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihan KO ,  Sanwon PARK ,  Minyong KIM ,  Jekyung CHOI ,  Junho CHOI

IPC: G11C16/04 ,  G11C5/06 ,  G11C16/10 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.

公开(公告)号：US20160284412A1

公开(公告)日：2016-09-29

申请号：US15174183

申请日：2016-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

公开(公告)号：US20160055914A1

公开(公告)日：2016-02-25

申请号：US14931936

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。

公开(公告)号：US20140293693A1

公开(公告)日：2014-10-02

申请号：US14197723

申请日：2014-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan NAM ,  Kuihan KO ,  Yang-Lo AHN ,  Kitae PARK

IPC: G11C16/10 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.

Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。