公开(公告)号：US09997402B2

公开(公告)日：2018-06-12

申请号：US15292756

申请日：2016-10-13

申请人： Samsung Electronics Co., Ltd.

发明人： Yong-Kong Siew

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/288

CPC分类号： H01L21/76823 ,  H01L21/288 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76885 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252

摘要： In a method of manufacturing a semiconductor device, a first insulating interlayer and a sacrificial layer is sequentially formed on a substrate. The sacrificial layer is partially removed to form a first opening exposing an upper surface of the first insulating interlayer. An insulating liner including silicon oxide is conformally formed on the exposed upper surface of the first insulating interlayer and a sidewall of the first opening. At least a portion of the insulating liner on the upper surface of the first insulating interlayer and a portion of the first insulating interlayer thereunder are removed to form a second opening connected to the first opening. A self-forming barrier (SFB) pattern is formed on a sidewall of the second opening and the insulating liner. A wiring structure is formed to fill the first and second openings. After the sacrificial layer is removed, a second insulating interlayer is formed.

公开(公告)号：US09865594B2

公开(公告)日：2018-01-09

申请号：US15015296

申请日：2016-02-04

申请人： Samsung Electronics Co., Ltd.

发明人： Yong-Kong Siew ,  Sang-Hoon Ahn

IPC分类号： H01L29/40 ,  H01L21/20 ,  H01L27/088 ,  H01L21/762 ,  H01L23/482 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L27/0886 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/76811 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76897 ,  H01L23/4821 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66545

摘要： A semiconductor device may include a plurality of wiring structures spaced apart from each other, a protection pattern including a metal nitride on each of the wiring structures, a spacer on a sidewall of the protection pattern, and an insulating interlayer structure containing the wiring structures and having an air gap between the wiring structures.