公开(公告)号：US11706998B2

公开(公告)日：2023-07-18

申请号：US17344206

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok Kim ,  Young Man Jang ,  Ung Hwan Pi

IPC: H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H01F10/32

CPC classification number: H10N50/85 ,  G11C11/161 ,  G11C11/1659 ,  H10B61/22 ,  H10N50/80 ,  H01F10/3286

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US20240365678A1

公开(公告)日：2024-10-31

申请号：US18502715

申请日：2023-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong Kim ,  Kwang Seok Kim ,  Seonggeon Park ,  Jeongchun Ryu

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetic memory device includes: (i) a reference magnetic pattern and a free magnetic pattern stacked in vertical alignment relative to a surface of a substrate, and (ii) a tunnel barrier pattern extending between the reference magnetic pattern and the free magnetic pattern. The reference magnetic pattern includes: a first pinned pattern, and a second pinned pattern extending between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern, which extends between the first pinned pattern and the second pinned pattern and antiferromagnetically couples the first pinned pattern and the second pinned pattern to each other. The first pinned pattern includes a first magnetic pattern and a second magnetic pattern extending between the first magnetic pattern and the exchange coupling pattern. One of the first magnetic pattern and the second magnetic pattern includes: cobalt, platinum, and a first non-magnetic element comprising at least one of Nb, Cr, Mo, W, Zr, Hf, and Ti, whereas the other one of the first magnetic pattern and the second magnetic pattern includes cobalt.

公开(公告)号：US11588100B2

公开(公告)日：2023-02-21

申请号：US17401620

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Kwang Seok Kim ,  Jangeun Lee ,  Ung Hwan Pi

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

公开(公告)号：US11088319B2

公开(公告)日：2021-08-10

申请号：US16685415

申请日：2019-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Seok Kim ,  Young Man Jang ,  Ung Hwan Pi

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01F10/32

Abstract: In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.

公开(公告)号：US11121309B2

公开(公告)日：2021-09-14

申请号：US16901866

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Kwang Seok Kim ,  Jangeun Lee ,  Ung Hwan Pi

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

公开(公告)号：US12213322B2

公开(公告)日：2025-01-28

申请号：US17380331

申请日：2021-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Hwan Lee ,  Kwang Seok Kim ,  Yong Seok Kim ,  Il Gweon Kim ,  Kil Ho Lee

IPC: H10B61/00 ,  G11C11/16

Abstract: A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.

公开(公告)号：US20210104661A1

公开(公告)日：2021-04-08

申请号：US16901866

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Kwang Seok Kim ,  Jangeun Lee ,  Ung Hwan Pi

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.