INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL MEMORY DEVICE

    公开(公告)号:US20190027434A1

    公开(公告)日:2019-01-24

    申请号:US15923737

    申请日:2018-03-16

    Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality or bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

    INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL MEMORY DEVICE

    公开(公告)号:US20190267321A1

    公开(公告)日:2019-08-29

    申请号:US16410266

    申请日:2019-05-13

    Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

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