公开(公告)号：US20230284450A1

公开(公告)日：2023-09-07

申请号：US18097332

申请日：2023-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngsik LEE ,  HYUK KIM ,  YEONGEUN YOOK

IPC: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H01L23/528 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

CPC classification number: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H01L23/5283 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

Abstract: A semiconductor device and an electronic system including the same are provided. The semiconductor device may include a stacked structure including electrodes stacked on a substrate, interlayer insulating layers interposed between the electrodes, and an upper insulating layer covering the uppermost electrode among the electrodes, and a vertical structure passing through the stacked structure in a vertical direction, and each of the interlayer insulating layers may have a first thickness, and the upper insulating layer may have a second thickness greater than the first thickness, and the upper insulating layer may include an insulating material different from an insulating material of each of the interlayer insulating layers.

公开(公告)号：US20240353996A1

公开(公告)日：2024-10-24

申请号：US18758413

申请日：2024-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun HAN ,  Hyewon KIM ,  Seungwoo SHIN ,  Youngsik LEE ,  Daesoo CHOI

IPC: G06F3/04883 ,  B60K35/10 ,  B60K35/22

CPC classification number: G06F3/04883 ,  B60K35/10 ,  B60K35/22 ,  G06F2203/04101 ,  G06F2203/04104

Abstract: An electronic device mounted in a vehicle, and an method performed thereby are provided. The electronic device may include a touch screen, memory storing at least one instruction, and at least one processor communicatively coupled to the touch screen and the memory. The at least one instruction, when executed by the at least one processor individually or collectively, may cause the electronic device to recognize an input event, based on receiving a multi-touch input or a hover input, of a user with respect to the touch screen, may identify a function corresponding to the input event, based on shape information of a plurality of points and position information of the plurality of points at which the input event is recognized, may change a function value with respect to the identified function, based on a gesture input being recognized via the touch screen, and may display a user interface (UI) indicating the changed function value.

公开(公告)号：US20230301068A1

公开(公告)日：2023-09-21

申请号：US18118766

申请日：2023-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanchul JEON ,  Yeonsu KIM ,  Youngsik LEE ,  Hyuk KIM ,  Sangwuk PARK

IPC: H10B12/00 ,  H01L23/528

CPC classification number: H10B12/315 ,  H01L23/5283 ,  H10B12/05

Abstract: A semiconductor memory device includes a substrate, contact electrodes extending in a first direction, each of the contact electrodes including a connection portion having a first thickness and a landing portion having a second thickness, an uppermost contact electrode above the contact electrodes, the contact electrodes being longer in the first direction than the uppermost contact electrode and defining a step structure, transistor bodies extending in a second direction and having a first source/drain, a monocrystalline channel layer, and a second source/drain sequentially arranged in the second direction, the monocrystalline channel layer being connected to a corresponding contact electrode, a lower electrode layer connected to the second source/drain of each of the transistor bodies, a capacitor dielectric layer covering the lower electrode layer and having a uniform thickness, and an upper electrode layer separated from the lower electrode layer by the capacitor dielectric layer.

公开(公告)号：US20230209826A1

公开(公告)日：2023-06-29

申请号：US18080325

申请日：2022-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeongeun YOOK ,  Hyuk KIM ,  Youngsik LEE

IPC: H10B43/27 ,  H01L23/535 ,  H10B43/40

CPC classification number: H01L27/11582 ,  H01L23/535 ,  H01L27/11573

Abstract: A three-dimensional semiconductor memory device includes a substrate including a first region and a second region, the second region extending from the first region; a stack including interlayer insulating layers and gate electrodes, which are alternately and repeatedly stacked on the substrate, the stack having a staircase structure on the second region; an insulating layer covering the staircase structure of the stack; first vertical channel structures on the first region, penetrating the stack, and in contact with the substrate; first contact plugs on the second region and penetrating the insulating layer and the stack; and first insulating pads in the insulating layer and enclosing upper portions of the first contact plugs, respectively, wherein the first insulating pads overlap with the first vertical channel structures in a horizontal direction.

公开(公告)号：US20230142479A1

公开(公告)日：2023-05-11

申请号：US17978415

申请日：2022-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngsik LEE ,  Seunghyun SHIN ,  Sunmi YOO

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679

Abstract: Provided are a storage device and an operating method thereof. The storage device includes a non-volatile memory including a plurality of memory regions and a storage controller configured to control the non-volatile memory through a performance path and at least one direct path, the storage controller including a buffer memory configured to store recovery data, wherein the storage controller writes the recovery data to the non-volatile memory through the at least one direct path in response to power being cut off and a fault being detected in the performance path, the performance path is a path for performing a write operation, a read operation, and an erase operation, and the at least one direct path is a path for performing only a write operation.