公开(公告)号：US20240347589A1

公开(公告)日：2024-10-17

申请号：US18633791

申请日：2024-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsoo SONG ,  Suhyeon KIM ,  Rooli CHOI ,  Jihoon PARK

IPC: H01L29/06 ,  H01L27/02 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0649 ,  H01L27/0207 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes an active region on a substrate and an active pattern extending in a first direction. A device isolation layer surrounds the active pattern. A gate structure extends in a second direction. A source/drain region is on the active pattern. An interlayer insulating layer covers the source/drain region. A contact structure is connected to the source/drain region. A buried conductive structure extends in the first direction, is electrically connected to the contact structure, and passes through the interlayer insulating layer to extend in a third direction. A power delivery structure extends from a lower surface of the substrate towards an upper surface thereof, and is electrically connected to the buried conductive structure. The buried conductive structure includes a body portion extending in the first direction, and an extension portion extending from a region of at least one side surface of the body portion in the second direction.

公开(公告)号：US20240363536A1

公开(公告)日：2024-10-31

申请号：US18634187

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung PARK ,  Heonjong SHIN ,  Jaehyun KANG ,  Youngsoo SONG

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5286 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include a substrate including a first active region including first active patterns spaced apart by a first interval, a second active region including second active patterns spaced apart by a second interval, first and second source/drain regions on the first and second active regions, first and second contact structures connected to the first and second source/drain regions, first and second conductive through-structures connected to the first and second contact structures, a power delivery structure in contact with bottom surfaces of the first and second conductive through-structures, a frontside interconnection structure, and a backside interconnection structure. The first conductive through-structure may be connected to the first source/drain region through the first contact structure. The second conductive through-structure may be connected to the second source/drain region through the frontside interconnection structure. The second interval may be different than the first interval.