公开(公告)号：US10147650B2

公开(公告)日：2018-12-04

申请号：US15211200

申请日：2016-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US20190051566A1

公开(公告)日：2019-02-14

申请号：US16162428

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/8238 ,  H01L29/16 ,  H01L29/78 ,  H01L29/165 ,  H01L29/161 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.