公开(公告)号：US11373909B2

公开(公告)日：2022-06-28

申请号：US16845683

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

公开(公告)号：US09990912B2

公开(公告)日：2018-06-05

申请号：US15233506

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Min-Hee Lee ,  Yun-Jae Lee

IPC: G10H7/00 ,  G10H1/34 ,  G10H1/18

CPC classification number: G10H1/34 ,  G10H1/183 ,  G10H7/00 ,  G10H2220/106 ,  G10H2220/201 ,  G10H2220/241 ,  G10H2230/015

Abstract: An electronic device and a method for reproducing a sound in the electronic device are provided. The electronic device includes a touchscreen displaying a keyboard having a plurality of keys and a plurality of sound source buttons corresponding respectively to a plurality of different sound sources, a processor connected electrically to the touchscreen, and a memory connected electrically to the processor, wherein the memory stores instructions that are executed to cause the processor to perform control such that when an input to at least one key among the plurality of keys is received, the sound source corresponding to at least one sound source button selected among the plurality of sound source buttons is reproduced as a sound corresponding to the received input.

公开(公告)号：USD774520S1

公开(公告)日：2016-12-20

申请号：US29529570

申请日：2015-06-09

Applicant: Samsung Electronics Co., Ltd.

Designer： Sung-Min Kim ,  Han-Gyul Kim ,  Min-Hee Lee ,  Yun-Jae Lee

公开(公告)号：US11353923B2

公开(公告)日：2022-06-07

申请号：US16760670

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Uk Han ,  Sung-Min Kim

IPC: G06F1/16

Abstract: According to various embodiments of the present invention, a head mounting device (HMD) may comprise: a facial wearing part which is worn on a user's face and outputs an image to both of a user's eyes; a wearing band part mounted on an upper side of the facial wearing part; and a support part which is mounted on the wearing band part to support a user's head, wherein the facial wearing part may comprise a housing in which an optical device is disposed, a guide member which extends over a first surface of the housing and is formed corresponding to a contour of the user's face, and a fixing plate which is mounted on the housing with a part of the guide member interposed between the fixing plate and the housing so as to fix the guide member to the housing. The head mounting device as mentioned above can be various according to embodiments.

公开(公告)号：US11201086B2

公开(公告)日：2021-12-14

申请号：US16833885

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

IPC: H01L29/78 ,  H01L21/8234

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

公开(公告)号：US10147650B2

公开(公告)日：2018-12-04

申请号：US15211200

申请日：2016-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/70 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US20200243395A1

公开(公告)日：2020-07-30

申请号：US16845683

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

公开(公告)号：US20190252540A1

公开(公告)日：2019-08-15

申请号：US16394671

申请日：2019-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/423 ,  H01L21/84 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US20190051566A1

公开(公告)日：2019-02-14

申请号：US16162428

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Ji-Su Kang ,  Byung-Chan Ryu ,  Jae-Hyun Park ,  Yu-Ri Lee ,  Dong-Ho Cha

IPC: H01L21/8238 ,  H01L29/16 ,  H01L29/78 ,  H01L29/165 ,  H01L29/161 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a first fin-type pattern and a second fin-type pattern which protrude upwardly from an upper surface of a field insulating film and extend in a first direction. A gate structure intersects the first fin-type pattern and the second fin-type pattern. A first epitaxial layer is on the first fin-type pattern on at least one side of the gate structure, and a second epitaxial layer is on the second fin-type pattern on at least one side of the gate structure. A metal contact covers outer circumferential surfaces of the first epitaxial layer and the second epitaxial layer. The first epitaxial layer contacts the second epitaxial layer.

公开(公告)号：US11876019B2

公开(公告)日：2024-01-16

申请号：US17523223

申请日：2021-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Sunhom Steve Paak ,  Heon-Jong Shin ,  Dong-Ho Cha

IPC: H01L27/088 ,  H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823481

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.