-
公开(公告)号：US20200347485A1
公开(公告)日：2020-11-05
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung LEE , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
-
公开(公告)号：US11634793B2
公开(公告)日：2023-04-25
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
-
公开(公告)号：US11728270B2
公开(公告)日：2023-08-15
申请号：US17384023
申请日：2021-07-23
发明人： Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
IPC分类号： H01L23/532 , H01L23/528 , H01L21/285 , H01L29/45
CPC分类号： H01L23/53204 , H01L21/2855 , H01L23/5283 , H01L29/45
摘要： A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.-
公开(公告)号：US12014985B2
公开(公告)日：2024-06-18
申请号：US18342145
申请日：2023-06-27
发明人： Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
IPC分类号： H01L23/532 , H01L21/285 , H01L23/528 , H01L29/45
CPC分类号： H01L23/53204 , H01L21/2855 , H01L23/5283 , H01L29/45
摘要： A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.-
公开(公告)号：US11114616B2
公开(公告)日：2021-09-07
申请号：US16550476
申请日：2019-08-26
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo
摘要： Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
-
公开(公告)号：US11830814B2
公开(公告)日：2023-11-28
申请号：US17376624
申请日：2021-07-15
发明人： Joungeun Yoo , Youngjae Kang , Duseop Yoon
IPC分类号： H01L23/532 , C22C29/14
CPC分类号： H01L23/53209 , C22C29/14 , H01L23/53257 , B22F2302/35
摘要： Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
-
公开(公告)号：US20200274064A1
公开(公告)日：2020-08-27
申请号：US16550476
申请日：2019-08-26
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo
摘要： Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.02 秒)
